This paper reports the use of ultrathin free-standing porous alumina membrane (PAM) in
pattern transferring for selective epitaxial growth (SEG) of Ge dots and films on Si. PAM, as a …

We report on Ge selectively grown by chemical vapor deposition on free-standing Si (001)
nanostructures for future photonic applications. Si (001) substrate is patterned in the form of …

Thick porous silicon (PS) buffer layers are used as sacrificial layers to epitaxially grow
planar and fully relaxed Ge membranes. The single crystal Ge layers have been deposited …

We have demonstrated the scalability of a process previously dubbed as Ge “touchdown” on
Si to substantially reduce threading dislocations below 107/cm2 in a Ge film grown on a …

We demonstrate that Ge can be selectively grown on Si (100) through openings in a SiO 2
nanotemplate by solid source molecular beam epitaxy. The selectivity relies on the thermal …

The surface morphology of Ge layers grown by Ge deposition on the Si (001) and Si (111)
surfaces covered with ultrathin SiO 2 films is studied with scanning tunneling microscopy. It …

The move from dimensional to functional scaling in microelectronics has led to renewed
interest toward integration of Ge on Si. In this work, simulation-driven experiments leading to …

Due to their compatibility with standard Si CMOS technology, Ge (or SiGe) heterostructures
on Si (001) play an important role in modern information and communications technology …

We have previously demonstrated that high-quality Ge can be grown on Si by the
touchdown process, where chemically oxidized Si is exposed to a Ge molecular beam. The …

The growth, morphological, and electrical properties of thin-film Ge grown by molecular
beam epitaxy on Si using a two-step growth process were investigated. High-resolution x …