Recent progress of III–V quantum dot infrared photodetectors on silicon
Heterogeneous integration of III–V photodetectors on Si substrates offers great advantages
for manufacturing complementary metal-oxide semiconductor (CMOS) compatible photonic …
for manufacturing complementary metal-oxide semiconductor (CMOS) compatible photonic …
Monolithically integrated InAs/GaAs quantum dot mid-infrared photodetectors on silicon substrates
High-performance, multispectral, and large-format infrared focal plane arrays are the long-
demanded third-generation infrared technique for hyperspectral imaging, infrared …
demanded third-generation infrared technique for hyperspectral imaging, infrared …
Quantum-dot infrared photodetectors: a review
AD Stiff-Roberts - Journal of Nanophotonics, 2009 - spiedigitallibrary.org
Quantum-dot infrared photodetectors (QDIPs) are positioned to become an important
technology in the field of infrared (IR) detection, particularly for high-temperature, low-cost …
technology in the field of infrared (IR) detection, particularly for high-temperature, low-cost …
Site-controlled and advanced epitaxial Ge/Si quantum dots: Fabrication, properties, and applications
In this review, we report on fabrication paths, challenges, and emerging solutions to
integrate group-IV epitaxial quantum dots (QDs) as active light emitters into the existing …
integrate group-IV epitaxial quantum dots (QDs) as active light emitters into the existing …
Bi2S3 Electron Transport Layer Incorporation for High-Performance Heterostructure HgTe Colloidal Quantum Dot Infrared Photodetectors
Infrared photodetectors (PDs) based on epitaxial semiconductors occupy the majority of the
market, but their high cost from material growth and device integration limits their application …
market, but their high cost from material growth and device integration limits their application …
InAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-off
We report the fabrication of quantum dot infrared photodetectors (QDIPs) on silicon (Si)
substrates by means of metal wafer bonding and an epitaxial lift-off process. According to …
substrates by means of metal wafer bonding and an epitaxial lift-off process. According to …
O-band and C/L-band III-V quantum dot lasers monolithically grown on Ge and Si substrate
Featured Application optical communication, silicon photonics. Abstract Direct epitaxial
growth of III-V heterostructure on CMOS-compatible silicon wafer offers substantial …
growth of III-V heterostructure on CMOS-compatible silicon wafer offers substantial …
High detectivity InAs quantum dot infrared photodetectors
We report a high detectivity of 31011 cm Hz1/2/W at 78 K for normal-incidence quantum dot
infrared photodetectors with ten layers of undoped InAs/InGaAs/GaAs quantum dot active …
infrared photodetectors with ten layers of undoped InAs/InGaAs/GaAs quantum dot active …
High-performance germanium quantum dot photodetectors in the visible and near infrared
We present our work on high performance germanium (Ge) quantum dot (QD)
photodetectors (PDs), fabricated on Si and Ge substrates, that operate via tunneling …
photodetectors (PDs), fabricated on Si and Ge substrates, that operate via tunneling …
Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector
K Stewart, M Buda, J Wong-Leung, L Fu… - Journal of Applied …, 2003 - pubs.aip.org
In this article the effect of rapid thermal annealing (RTA) on a 30 stacked InAs/GaAs,
molecular beam epitaxially grown quantum dot infrared photodetector (QDIP) device is …
molecular beam epitaxially grown quantum dot infrared photodetector (QDIP) device is …