A review is presented of key power amplifier (PA) performance requirements for millimeter- wave 5G systems, along with a comparison of the potential of different semiconductor …
Y Kim, Y Kwon - IEEE Transactions on Microwave Theory and …, 2015 - ieeexplore.ieee.org
A new analysis methodology for millimeter-wave stacked-FET power amplifier design is proposed with a focus on the output power improvement by adjusting the complex load …
Stacked field-effect transistor (FET) CMOS millimeter-wave power amplfiers (PAs) are studied with a focus on design of appropriate complex impedances between the transistors …
The next-generation 5G and beyond-5G wireless systems have stimulated a substantial growth in research, development, and deployment of mm-Wave electronic systems and …
Whether you are an RF transistor designer, an amplifier designer or a system designer, this is your one-stop guide to RF and microwave transistor power amplifiers. A team of expert …
JH Kim, G Do Jo, JH Oh, YH Kim… - IEEE Transactions on …, 2010 - ieeexplore.ieee.org
In this paper, efficiency-limiting physical constraint effects imposed on the knee voltage, along with a variation of the optimum load resistance, are investigated for highly efficient …
Do you want to know how to design high efficiency RF and microwave solid state power amplifiers? Read this book to learn the main concepts that are fundamental for optimum …
DYC Lie, JC Mayeda, Y Li… - … and Mobile Computing, 2018 - Wiley Online Library
The 5G wireless revolution presents some dramatic challenges to the design of handsets and communication infrastructures, as 5G targets higher than 10 Gbps download speed …
M Ćwikliński, P Brückner, S Leone… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
In this article, we present a set of gallium nitride (GaN) power amplifiers (PAs) that provide state-of-the-art performance within the D-band (110-170 GHz) and G-band (140-220 GHz) …