An area efficient 48-62 ghz stacked power amplifier in 22nm fd-soi
This paper presents a millimeter wave power amplifier (PA) implemented in 22nm FD-SOI
technology with only 0.8 V transistors. The single stage pseudo-differential 3-level stacked …
technology with only 0.8 V transistors. The single stage pseudo-differential 3-level stacked …
A wideband millimeter-wave differential stacked-FET power amplifier with 17.3 dBm output power and 25% PAE in 45nm SOI CMOS
This paper presents the design of an efficient two-stage m illim eter-wave power amplifier
(PA) using stacked field-effect transistors in 45nm silicon-on-insulator (SOI) CMOS …
(PA) using stacked field-effect transistors in 45nm silicon-on-insulator (SOI) CMOS …
Design of a Compact Power Amplifier with 18.6 dBm 60 GHz 20.5% PAE in 22 nm FD-SOI
This paper presents the design of a 60 GHz power amplifier (PA) in a 22 nm FD-SOI CMOS
technology. To improve the performance at millimeter-wave frequencies by minimizing the …
technology. To improve the performance at millimeter-wave frequencies by minimizing the …
A 77 GHz high power and gain transformer-coupled amplifier in CMOS FD-SOI 28 NM
A Hamani, TP Vuong… - 2018 18th Mediterranean …, 2018 - ieeexplore.ieee.org
In this paper, a millimeter-wave high power and gain transformer-coupled amplifier is
proposed. Designed in CMOS FD-SOI 28 nm technology and operating at 77 GHz, the 3 …
proposed. Designed in CMOS FD-SOI 28 nm technology and operating at 77 GHz, the 3 …
A 26GHz 22.2 DBM Variable Gain Power Amplifier in 28NM FD-SOI CMOS for 5G Antenna Arrays
C Elgaard, A Axholt, E Westesson… - 2018 Asia-Pacific …, 2018 - ieeexplore.ieee.org
A 26 GHz power amplifier (PA) targeting millimeter wave 5G mobile systems is presented.
The two stage PA, integrated in a complete transmitter in a 28 nm FD-SOI CMOS process …
The two stage PA, integrated in a complete transmitter in a 28 nm FD-SOI CMOS process …
167-GHz and 155-GHz high gain D-band power amplifiers in CMOS SOI 45-nm technology
A Hamani, A Siligaris, B Blampey… - 2020 15th European …, 2021 - ieeexplore.ieee.org
In this paper, two D-band millimeter-wave wideband and high gain power amplifiers are
proposed. Designed in CMOS SOI 45 nm technology, the two amplifiers operate in two …
proposed. Designed in CMOS SOI 45 nm technology, the two amplifiers operate in two …
Ka-Band stacked power amplifier on 22 nm CMOS FDSOI technology utilizing back-gate bias for linearity improvement
J Rusanen, M Hietanen, A Sethi… - 2019 IEEE Nordic …, 2019 - ieeexplore.ieee.org
This paper presents a method for extending millimeter wave power amplifier (PA) linear
range by fine tuning the CMOS SOI device output characteristics via back-gate biasing. The …
range by fine tuning the CMOS SOI device output characteristics via back-gate biasing. The …
A Dual-Band 28/38-GHz Power Amplifier With Inter-Band Suppression in 22-nm FD-SOI CMOS for Multi-Standard mm-Wave 5G Communications
In this article, we present a dual-band 28/38-GHz power amplifier (PA) with inter-band
suppression for millimeter-wave 5G communications. The dual-band operation is achieved …
suppression for millimeter-wave 5G communications. The dual-band operation is achieved …
Design of multi-stacked CMOS mm-wave power amplifiers for phased array applications using triple-well process
MH Montaseri, R Vuohtoniemi, J Aikio… - 2018 IEEE Nordic …, 2018 - ieeexplore.ieee.org
This paper concerns with the design of multi-stacked CMOS millimeter-wave power
amplifiers suitable for phased array front-end applications using triple-well process. The …
amplifiers suitable for phased array front-end applications using triple-well process. The …
A PMOS mm-wave power amplifier at 77 GHz with 90 mW output power and 24% efficiency
JA Jayamon, JF Buckwalter… - 2016 IEEE Radio …, 2016 - ieeexplore.ieee.org
In deeply scaled CMOS processes with gate lengths below 40 nm the analog performance
of NMOS and PMOS FETs are comparable. At the same time PMOS FETs can typically …
of NMOS and PMOS FETs are comparable. At the same time PMOS FETs can typically …