Large‐Scale Formation of Uniform Porous Ge Nanostructures with Tunable Physical Properties

T Hanuš, J Arias‐Zapata, B Ilahi… - Advanced Materials …, 2023 - Wiley Online Library
Porous germanium (PGe) nanostructures attract a lot of attention for various emerging
applications due to their unique properties. Consequently, there is an increasing need for …

Potential monitoring during Ge electrochemical etching: Towards tunable double porosity layers

T Hanuš, L Mouchel, B Ilahi, A Dupuy, J Cho… - Electrochimica …, 2024 - Elsevier
Abstract Porous Germanium (PGe) has emerged as a promising material for applications
such as substrate engineering, sensing, and energy storage, thanks to its uniquely versatile …

Achieving porous germanium from both p-and n-type epitaxial Ge-on-Si via bipolar potentiostatic etching

Y Zhu, Y Zhang, B Li, GM Xia, RT Wen - Electrochimica Acta, 2023 - Elsevier
Due to the large surface specific area, tunable porosity and refractive index, porous
germanium (Ge) has wide applications in optoelectronics, photovoltaics, anode materials in …

The effect of passivation to etching duration ratio on bipolar electrochemical etching of porous layer stacks in germanium

W Schreiber, T Liu, S Janz - Journal of Physics and Chemistry of Solids, 2023 - Elsevier
The effect of the passivation to etching duration ratio on the bipolar electrochemical etching
of highly p-doped germanium on its pore structures has been investigated. The final goal is …

Germanium surface wet-etch-reconditioning for porous lift-off and substrate reuse

A Chapotot, B Ilahi, J Arias-Zapata, T Hanuš… - Materials Science in …, 2023 - Elsevier
Reducing both the cost and weight of Germanium (Ge)-based devices is a key concern in
extending these technologies to mainstream applications. In this framework, the porous Ge …

Fast growth synthesis of mesoporous germanium films by high frequency bipolar electrochemical etching

YA Bioud, A Boucherif, A Belarouci, E Paradis… - Electrochimica …, 2017 - Elsevier
Mesoporous germanium (MP-Ge) has been predicted to play an important role in a wide
range of potential applications. These porous Ge networks are characterized by physical …

Heteroepitaxy of Ge on Si (001) with pits and windows transferred from free-standing porous alumina mask

Y Huangfu, W Zhan, X Hong, X Fang, G Ding… - …, 2013 - iopscience.iop.org
This paper reports the use of ultrathin free-standing porous alumina membrane (PAM) in
pattern transferring for selective epitaxial growth (SEG) of Ge dots and films on Si. PAM, as a …

Nanostructured germanium prepared via ion beam modification

NG Rudawski, KS Jones - Journal of Materials Research, 2013 - cambridge.org
“Nanostructured” germanium (Ge; also known as “voided,”“porous,”“nanoporous,”“cratered,”
and “honeycomb” Ge) created via ion beam modification has been studied for many years …

Anti-reflective porous Ge by open-circuit and lithography-free metal-assisted chemical etching

YY Zhang, SH Shin, HJ Kang, S Jeon, SH Hwang… - Applied Surface …, 2021 - Elsevier
Abstract Porous Ge (PGe) layer is formed on single-crystalline Ge (c-Ge) as well as in a
releasable form (eg, free-standing PGe) by lithography-free metal-assisted chemical etching …

[HTML][HTML] Investigation of the heteroepitaxial process optimization of Ge layers on Si (001) by RPCVD

Y Du, Z Kong, MS Toprak, G Wang, Y Miao, B Xu, J Yu… - Nanomaterials, 2021 - mdpi.com
This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a
reduced pressure chemical vapor deposition (RPCVD) chamber. Based on the initial …