In the present article we report enhanced light absorption, tunable size-dependent blue shift,
and efficient electron–hole pairs generation in Ge nanoporous films (np-Ge) grown on Si …

Germanium (Ge) nanowires have been produced by electrochemical etching of single-
crystalline n-type Ge {100} in a HCl-containing aqueous electrolyte. Macropores could be …

Reducing both the cost and weight of Germanium (Ge)-based devices is a key concern in
extending these technologies to mainstream applications. In this framework, the porous Ge …

The authors report on a technique of combining low temperature nanowire synthesis with
self-assembly of block copolymers in order to obtain a controlled array of nanowires. An …

Germanium nanowires are produced by a novel approach, combining two well known
electrochemical and metal assisted chemical etching. The metal assisted etching procedure …

We report results for the electrochemistry of the germanium (II) tri‐halide anions,[GeCl3]−,[
GeBr3]− and [GeI3]−, in supercritical difluoromethane containing 60 mm [NnBu4][BF4] at …

We report on a lithography-free self-organized inductively coupled plasma (ICP) etching
process to manufacture nanostructured Ge surfaces with a strong absorbance in the visible …

A method of germanium electrodeposition from a GeO 2-based aqueous solution into the
pore channels of anodic mesoporous silicon formed on n-type highly-doped (100) silicon …

Abstract Porous Ge (PGe) layer is formed on single-crystalline Ge (c-Ge) as well as in a
releasable form (eg, free-standing PGe) by lithography-free metal-assisted chemical etching …

A series of mesoporous germanium materials were synthesized via the self-templating
method. Germanium tetrachloride and sodium potassium alloy were utilized as germanium …