A key challenge in the development of two-dimensional (2D) devices is the fabrication of
metal–semiconductor junctions with minimal contact resistance and depinned energy levels …

Digital logic circuits are based on complementary pairs of n-and p-type field effect transistors
(FETs) via complementary metal oxide semiconductor technology. In three-dimensional (3D) …

High Schottky barrier heights at metal–semiconductor junctions due to Fermi-level pinning
can degrade the performance of electronic devices and increase their energy consumption …

Abstract Two-dimensional (2D) materials such as transition metal chalcogenides can be
used to create different components of electronic devices, including semiconducting …

Abstract 2D semiconductors, particularly transition metal dichalcogenides (TMDs), have
emerged as highly promising for new electronic technologies. However, a key challenge in …

As the dimensions of the semiconducting channels in field-effect transistors decrease, the
contact resistance of the metal–semiconductor interface at the source and drain electrodes …

Two-dimensional semiconductors such as layered transition metal dichalcogenides can
offer superior immunity to short-channel effects compared with bulk semiconductors such as …

Heterostructures made using two-dimensional semiconducting transition metal
dichalcogenides could be used to build next-generation electronic devices. However, their …

The development of next-generation electronics requires scaling of channel material
thickness down to the two-dimensional limit while maintaining ultralow contact resistance …

A main challenge for the development of two‐dimensional devices based on atomically thin
transition‐metal dichalcogenides (TMDs) is the realization of metal–semiconductor junctions …