Abstract Porous Ge (PGe) layer is formed on single-crystalline Ge (c-Ge) as well as in a
releasable form (eg, free-standing PGe) by lithography-free metal-assisted chemical etching …

Due to the large surface specific area, tunable porosity and refractive index, porous
germanium (Ge) has wide applications in optoelectronics, photovoltaics, anode materials in …

As an emerging anisotropic wet etching technique, metal‐assisted chemical etching
(MacEtch) has been widely employed for fabricating nano‐and micro‐structures of …

Abstract Epitaxial Ge-on-Si possesses a high density of threading dislocations (TDs) due to
the lattice mismatch and difference in thermal expansion coefficient. By employing the lattice …

A femtosecond laser raster-type in situ repetitive direct writing technique was used for the
fabrication of anti-reflective microhole structures in Germanium (Ge) in the visible near …

Ge nanostructures were fabricated by wet processes based on etching assisted with the
catalytic-metal-particles and the electroless-metal-deposition under various conditions. In …

Porous germanium (PGe) nanostructures attract a lot of attention for various emerging
applications due to their unique properties. Consequently, there is an increasing need for …

Due to its high refractive index, reflectance is often a problem when using Germanium for
optoelectronic devices integration. In this work, we propose an effective and low-cost nano …

We developed a new digital etch process that allows precise etching of Germanium or
Germanium-tin (Ge1− x Sn x) materials. The digital etch approach consists of Ge1− x Sn x …

Ge surfaces were etched by means of metal-assisted chemical etching (MaCE). The
behavior of the MaCE reaction in diluted H 2 O 2 was compared with that of a conventional …