… Recently proposed HBM2E [3] has a TSV I/Os of 1024 and a bandwidth of 640 GB/s with a …
, “A 1.2 V 12.8 GB/s 2 Gb mobile wide-I/O DRAM with 4 X 128 I/Os using TSV-based stacking,” …

… to its immediately adjacent local interface I/Os, reducing the on-… TSV array required for an
HBM2 DRAM is estimated using … The simple unterminated 2 Gb/s signaling used in HBM2 will …

… Similar to wide I/O, it is realized by TSV formation, /bump joint, … cores up to eight and
the BW up to 500–600 GB/s, … 1.2 V 12.8GB/s 2Gb mobile wide-I/O DRAM with 4×128 I/Os …

… of the SoC and connected via Through Silicon Via (TSV). We … with 4 MB DRAM and 16 MB
RRAM (scaling factor of 128). … A 1.2V 12.8GB/s 2Gb mobile Wide-I/O DRAM with 4x128 I/Os …

… Even though the physical interface (PHY), through-silicon via (TSV), … The 12.8 GOPS
consumes 2.3 W of power. … of energy-efficient 3D-stacked wide I/O DRAMs. In Proceedings of the …

… a 1.2V 12.8GB/s 2Gb mobile Wide-I/O DRAM with 4x 128 I/Os using TSV-based stacking.
In Proceedings of the 2011 IEEE International Solid-state Circuits Conference. IEEE. …

… 2 story data bus architectures of 64 bits (32×2) and 128 bits (… DDR low-power embedded
DRAM nacro for a 3D graphics … “An 8× 10-Gb/s source-synchronous I/O system based on high…

… its bandwidth to hundreds of GB/s with high data throughput … phase difference of 1000+
I/Os can be large enough to … 5.19 shows the eye diagram measured at 12.8Gb/s, 20Gb/s, …

… The 512 GB/s stacked DRAM interface we developed in the … TSV enables a larger number
of dice to be stacked: in the … It consists of one or more Wide I/O DRAM dice stacked on top of a …

… ], and Samsung’s Wide I/O [72] are examples of 3D … This value is 160-320 GB/s for HMC [4].
This is achieved by utilizing … TSV-based interconnection provides a low latency and energy …