… three-dimensional carrier profiling of semiconductor devices … total resistance of the simulated
structure increases with … , the carrier quantification will not be reliable if calibrated against a …

… and three-dimensional carrier profiles in semiconductor devices … on a TEM lamella to combine
structural, compositional and … of a calibration standard to convert the measured spreading …

… different structures were grown, employing SiN, SiO 2 or Al 2 O 3 as … , calibration samples
such as these can give quantitative data. For the Al 2 O 3 mask sample, the conductivity profile …

… phosphorous dopants are measured via calibrated SSRM [5]. … It follows the pyramidal
structure of the surface. For two … We compare the simulated ECV profile and the profiles resulting …

… and carrier concentration depth profiles using calibration … 3 to 1.16e20 #/cm 3 , as
measured with spreading resistance … SSRM profiles obtained for a n-type Si staircase structure …

… (SSRM) is able to detect charge carriers with two dimensional (… is to apply a SSRM scan
of a calibration sample with known … Boron profiles in Si bulk and nanopillar structures were …

… scanning spreading resistance microscopy (… calibration sample has multiple layers with
known carrier concentrations, determined by electrochemical capacitance-voltage (ECV) profiling…

… As the resolution of CTEM microscopes is usually 2–3 Å, the atomic structure cannot be
resolved. … of measuring the carrier concentration profile, the mobility, and the carrier lifetime by …

… with a polycrystalline in situ doped structure, with a high (>10 20 at cm −3 ) phosphorus
dopant … SIMS depth profiles using Cs + primary ions at 10 keV energy. Calibration of the SIMS …

… Contrary to the case of Si structures or compounds such as GaAs or … signal of the calibration
samples C 1 –C 3 (black dots). … (a) Calibrated carrier concentration profiles corresponding to …