… Local vibrational modes in heavily carbon doped GaSb have been reported by Chen et al.
[… The difference between the optical and electrical mobilities determined from this study is …

… Hole mobilities reported for heavily carbon-doped samples, moreover, are at least 30% … The
authors have directly measured the presence of interstitial carbon in carbon-doped epilayers …

… degree of interaction between the resulting GaSb layer and the substrate was … GaSb
transferred onto a Si substrate, and the parameters of the obtained samples are given (Si and GaSb …

… nonlinear optical properties of the GaSb film. Thus, the comprehensive performance and
potential of GaSb as a new SA are exceptional, and we look forward to its further development. …

… /GaSb type-II … optical response in InAs/AlSb/GaSb type-II superlattices by adjusting the
AlSb material thickness has been presented [30]. Optical properties of N structure InAs/AlSb/GaSb …

… In this work, we have achieved carbon-doped p-InAlAs epitaxial layers with adjustable doping
concentrations by tailoring the growth parameters through a metalorganic chemical vapor …

… optical parameters such as optical electronegativity, surface and volume energy loss functions,
optical and electrical … in the SILAR method on the nonlinear optical properties of Fe 2 O 3 …

… III-V compounds (eg GaSb, InN) have attracted increasing attention in the field of optical-intensity
modulation due to their excellent electrical and optical properties, such as high electron …

… optical properties, Group III-V compounds are gaining more and more attention in optical …
We also used GaSb as a SA material in our experiments and got the mode-locked output. …

… Besides, III-V semiconductor-based SAs stand out from various SAs by the excellent electrical
and optical properties such as high electron mobility, high surface sensitivity and quantum …