[HTML][HTML] On large-signal modeling of GaN HEMTs: past, development and future

H Luo, W Hu, Y Guo - Chip, 2023 - Elsevier
… still exhibits a much better scalability than empirical models. … model from the empirical
models, physical models and the … and reported its application in GaN-based RF- and HV-circuits…

An improved compact large-signal GaN HEMT model for switch application

Z Hu, Q Zhang, K Ma, R He… - … on electron devices, 2022 - ieeexplore.ieee.org
… , many empirical equation-based large-signal HEMT models … -performance RF switch or a
switchbased transceiver system. … many studies on modeling these effects with the approach of …

[PDF][PDF] Device Concept Study of GaN-on-Si HEMTs with Deeply Scaled Field Plate for Improved High Frequency Performance

K Reiser - 2022 - opus4.kobv.de
… of GaN RF power devices is predominantly based on GaN … of the circuit elements in the
small signal models is no longer … and empirical models supporting the device simulations of the …

[PDF][PDF] Simple Small-Signal HEMT Model Suitable for GaN Stability Analysis and Technologies Benchmarking

A Issaoun, T Roedle - World Journal of Applied Physics, 2021 - pdfs.semanticscholar.org
… of the small-signal model usage to GaN technologies … GaN high-electron-mobility
transistors (HEMTs). The proposed … technology point of view, GaN technology has the highest

Small signal behavioral modeling technique of GaN high electron mobility transistor using artificial neural network: An accurate, fast, and reliable approach

A Khusro, S Husain, MS Hashmi… - … Journal of RF and …, 2020 - Wiley Online Library
… , empirical modeling approach is very common for the development of small signal model
Preprocessing stage of any model includes scaling, normalization, grouping, and removing …

A generic and efficient globalized kernel mapping-based small-signal behavioral modeling for GaN HEMT

A Khusro, S Husain, MS Hashmi, AQ Ansari… - IEEE …, 2020 - ieeexplore.ieee.org
… is very appealing for device modeling especially at RF and … S-parameters has been scaled
logarithmically to ensure the … In contrast, the ANN works on the principle of empirical risk …

ANN-based large-signal model of AlGaN/GaN HEMTs with accurate buffer-related trapping effects characterization

X Du, M Helaoui, A Jarndal, T Liu, B Hu… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
… Hence, a new empirical equation is proposed in this article to … A similar method of scaling
the voltage derivatives discussed … Zirath, “Accurate smallsignal modeling of HFET’s for …

Modeling the Impact of Dynamic Fin-Width on the IV, CV and RF Characteristics of GaN Fin–HEMTs

AUH Pampori, SA Ahsan… - … on Electron Devices, 2022 - ieeexplore.ieee.org
… introduce an engineering approach to model the current and … have witnessed a progressive
scaling of the channel lengths [… monic empirical large-signal model for high-power GaN

[图书][B] Advanced SPICE Model for GaN HEMTs (ASM-HEMT): A New Industry-Standard Compact Model for GaN-based Power and RF Circuit Design

S Khandelwal - 2022 - books.google.com
… of transistors is used to provide amplification of a small signal. Transistors with a large
input-to-… as the empirical models. For instance, neural networks’ scalability wrt geometry and …

[HTML][HTML] Scaled GaN-HEMT large-signal model based on EM simulation

W Lee, H Kang, S Choi, S Lee, H Kwon, KC Hwang… - Electronics, 2020 - mdpi.com
… a scaled empirical large-signal model of the multi-finger GaN-HEMT using the conventionally
modeled large-signal model of the unit device … used to design high-power RF amplifiers for …