Epitaxial lift-off process for III-V solar cells by using porous germanium for substrate re-use

R Arvinte, S Cailleaux, ABP Mbeunmi… - … IEEE Photovoltaic …, 2020 - ieeexplore.ieee.org
… ]–[12], spalling [13] and/or germanium-onnothing (GON) [14]. In … solar cell structure which
can be selectively etched so, the … PGe by the epitaxial growth of ~0.4µm thick GaAs layer on the …

Conversion efficiency improvement of ELO GaAs solar cell, deposited on water soluble sacrificial buffer

S Sharma, CA Favela, B Yu, E Galstyan… - Surface and Coatings …, 2023 - Elsevier
… of power conversion efficiency of an epitaxially-lifted-off single junction GaAs solar cell
deposited … etching a sacrificial layer to epitaxially lift-off GaAs film in a process known as epitaxial

High‐efficiency GaAs solar cells grown on porous germanium substrate with PEELER technology

V Daniel, T Bidaud, J Chretien, N Paupy, A Ayari… - Solar …, 2024 - Wiley Online Library
… substrate and the epitaxial growth of the GaAs solar structure, we … The lift-off evaporation
process for the creation of these … Ge membrane through the 'germanium-on-nothing' RIE-based …

Theoretical and experimental assessment of thinned germanium substrates for III–V multijunction solar cells

I Lombardero, M Ochoa, N Miyashita… - … in Photovoltaics …, 2020 - Wiley Online Library
… of III–V multijunction solar cells have been focused on GaAs and GaInP … epitaxial
growth of thin Ge solar cells, 30, 31 exfoliated Ge substrates, 32 or the so-called germanium-on-nothing

[HTML][HTML] Wafer-scale detachable monocrystalline germanium nanomembranes for the growth of III–V materials and substrate reuse

N Paupy, ZO Elhmaidi, A Chapotot, T Hanuš… - Nanoscale …, 2023 - pubs.rsc.org
… Recently, another technique called Germanium-on-Nothing 7,… structural investigations of the
epitaxial Ge NMs by High-… A case study of its impact on the sustainability of space solar cell

III-V material growth on electrochemically porosified Ge substrates

E Winter, W Schreiber, P Schygulla, PL Souza… - Journal of Crystal …, 2023 - Elsevier
… Later, the III-V epitaxial layers are mechanically lifted at the … Here, we demonstrate the
III-V epitaxy material quality by … Germanium-on-nothing for epitaxial liftoff of GaAs solar cells

Performance of III–V solar cells grown on reformed mesoporous Ge templates

A Cavalli, N Alkurd, S Johnston… - … of Photovoltaics, 2021 - ieeexplore.ieee.org
… -junction solar cell by organometallic vapor-phase epitaxy (… for III–V epitaxy and demonstrated
a 5.7% efficient photovoltaic … “Germanium-on-nothing for epitaxial liftoff of GaAs solar cells,…

Germanium surface wet-etch-reconditioning for porous lift-off and substrate reuse

A Chapotot, B Ilahi, J Arias-Zapata, T Hanuš… - Materials Science in …, 2023 - Elsevier
… ) layer produced on the same wafer after epitaxial layer lift-off and chemical reconditioning.
Indeed, considering the employed porosification cell we recently developed [46] along with …

Sequential fabrication of multiple Ge nanomembranes from a single wafer: Towards sustainable recycling of Ge substrates

A Chapotot, B Ilahi, T Hanuš, G Hamon, J Cho… - Sustainable Materials …, 2024 - Elsevier
… part of the solar cell's weight [6], thereby highly impacting its power-to-… Aside from these
methods, the porous lift-off approach has … process and subsequent epitaxial growth, providing …

[HTML][HTML] Analysis of crystalline defects caused by growth on partially planarized spalled (100) GaAs substrates

JT Boyer, AK Braun, KL Schulte, J Simon, SW Johnston… - Crystals, 2023 - mdpi.com
GaAs wafers on the defect structure of GaAs solar cell layers grown by hydride vapor phase
epitaxy (… Improved radiation resistance of epitaxial lift-off inverted metamorphic solar cells. In …