Ferroelectric tunnel junctions

V Garcia - arXiv preprint arXiv:2011.07864, 2020 - arxiv.org
… (51) promises large tunnel electroresistance when used in the … the super-tetragonal phase
(Tphase) because of its large c/a … tunnel junctions first and more recently BiFeO3-based FTJs, …

Giant Tunneling Electroresistance Induced by Interfacial Doping in Ferroelectric Tunnel Junctions

W Xiao, L Kang, H Hao, Y Zhou, X Zheng, L Zhang… - Physical Review …, 2022 - APS
… This work intends to achieve large TER ratio by interfacial doping in FTJs by taking Pt/…
Barthélémy, Giant electroresistance of super-tetragonal BiFeO3-based ferroelectric tunnel junctions

High Tunneling Electro-Resistance Due to Resonant-Type Tunneling in a Ferroelectric Tunnel Junction (FTJ) with a Composite Barrier

S Ipsita, SK Sahu, PK Mahapatra - Ferroelectrics, 2024 - Taylor & Francis
… , ferroelectric tunnel junctions (FTJs) have emerged as potential devices for memory sector
wherein the tunneling current … role in this big-data era. Among different NVM technologies, the …

Polarization-switching pathway determined electrical transport behaviors in rhombohedral BiFeO 3 thin films

J Wang, H Yang, Y Wang, Y Fan, D Liu, Y Yang, J Wu… - Nanoscale, 2021 - pubs.rsc.org
Ferroelectric tunneling junctions (FTJs) have attracted … the tunneling electroresistance (TER)
effect by regulating the … decrease the tunneling barrier, which would induce a large leakage …

Dielectric properties and ferroelectric resistive switching mechanism in the epitaxial (111) BiFeO3 films

Y Wei, Z Liu, D Xu, L Dong, G Li, Y Wang, F Fan… - …, 2023 - Taylor & Francis
… Yamada et al. attributed the BFO RS effect to heterostructure ferroelectric tunneling, which
induces distinct tunneling barrier asymmetry when the polarization direction is opposite […

[HTML][HTML] Ferroelectric tunnel junctions: current status and future prospect as a universal memory

U Sharma, G Kumar, S Mishra, R Thomas - Frontiers in Materials, 2023 - frontiersin.org
… Since it requires a lot of foot print area due to the huge size of the cell typically six transistors,
… Because of this tunnel electro-resistance, ferroelectric states are not damaged by the …

Ferroelectric tunnel junctions: promise, achievements and challenges

SH Park, HJ Lee, MH Park, J Kim… - Journal of Physics D …, 2024 - iopscience.iop.org
… oxide could influence tunneling barrier modulation due to its low formation energy [119–121].
Li et al. also observed the giant electroresistance in ferroionic tunnel junctions of Pt/BTO/Nb…

Flexible artificial synapse based on single-crystalline BiFeO3 thin film

Z Zhao, A Abdelsamie, R Guo, S Shi, J Zhao, W Lin… - Nano Research, 2022 - Springer
… artificial synapse based on ferroelectric tunnel junctions (FTJs) … -thin film shows robust
ferroelectric property, which leads to a … as the sacrificing layer to obtain large-scale high-quality …

Direct Observation of Interface-Dependent Multidomain State in the BaTiO3 Tunnel Barrier of a Multiferroic Tunnel Junction Memristor

Q Zhang, X Li, J Zhu - ACS Applied Materials & Interfaces, 2021 - ACS Publications
large effect on the corresponding performance; for example, the ferroelectric polarization of
ferroelectric … (34) For tunnel junctions, the behaviors of the interfaces are more complex since …

Atomic-Scale Study on Dopant-and Strain-Effects in Bismuth-Ferrite Thin Films

U Haselmann - 2022 - pure.unileoben.ac.at
… the latter one includes switchable diodes, ferroelectric tunnel junctions (FTJs), and … are large,
and the super-tetragonal phase of BFO is even more promising due to its larger ferroelectric