… InGaN quantum dots grown by metalorganic chemical vapor … , the GaN:Mg must be annealed
at moderate temperatures (∼… schools of thought being post-growth integration or direct …

… structures and the formation of InxGa1-xN quantum dots (QDs). Through high-… metalorganic
vapour phase epitaxy MQW … Therefore, InGaN QW structures grown on the sidewalls of GaN …

… of Ga droplets in a nitrogen flux using a combined computational-experimental approach …
mechanisms of GaN quantum dots (QDs) via annealing of Ga droplets in a nitrogen flux. We …

… TJ, the effects of post-growth activation annealing, epi-layer … vapor phase epitaxy (MOCVD)
and ii) the demonstration of p-… Quantum dots (QDs) are nanometer-scale islands of smaller-…

… In this thesis, these issues were investigated using various … : Effects of post-growth
annealing on structural and optical … QD lasers grown via metal-organic vapour phase epitaxy. …

… , also known as metal organic vapor phase epitaxy (MOVPE). … to grow cubic GaN using
NH 3 as a nitrogen source in MBE. … can be dissociated via post-growth thermal annealing. In …

… post-growth hightemperature annealing on physical vapor … efficiency, we employ three-dimensional
(3D) quantum dots (QDs) … Toyoda, « Metalorganic vapor phase epitaxial growth of a …

… ], post-growth high-temperature annealing [13], migration enhanced epitaxy by ammonia
pulse-flow method [14], or epitaxial … region for which a RIBER RF nitrogen (N 2 ) plasma source …

… to the creation of In-rich regions such as quantum dot (QD) [22], which might serve as the …
organometallic vapor phase epitaxy (OMVPE) technique has been widely used to grow InGaN…

… an annealing process. All the film thicknesses were controlled by post-growth analysis via
… It should also be mentioned that when using MBE to epitaxially grow the InGaN layer, the …