Si0. 5Ge0. 5 Channel FinFET Preparation on an in situ Doped SiGe SRB and its electrical characteristics optimization
A Chen, Y Li, X Jia, X Cheng… - ECS Journal of Solid State …, 2023 - iopscience.iop.org
… 0.5 fin without S/D epitaxy or silicide process, 21 and … of low resistivity Ni-based germanosilicide
contributes more to the improvement of I ON due to the reduction of S/D series resistance…
contributes more to the improvement of I ON due to the reduction of S/D series resistance…