[图书][B] Optical analysis of InN and InGaN nanostructures

MDC Ries - 2021 - search.proquest.com
… modes in tip-enhanced Raman spectroscopy (TERS). A … between the original values of A1
and E1 depending on the … of pre- eminent concern in In𝑥Ga1−𝑥N with 𝑥 0.25. The decreasing …
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[图书][B] Growth of (In, Ga) N/GaN short period superlattices using substrate strain engineering

T Ernst - 2020 - search.proquest.com
… Investigations by X-ray diffraction and Raman spectroscopy … ), where the grown epilayer
assumes some of the crystalline … two linear equations for two phonon modes A1(LO) and E2(H) …
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Analysis of phonon transport through heterointerfaces of InGaN/GaN via Raman imaging using double-laser system: The effect of crystal defects at heterointerface

T Nakayama, K Ito, B Ma, D Iida, MA Najmi… - Materials Science in …, 2022 - Elsevier
… in Raman spectroscopy is used to demonstrate the phonon … density, we focus the E 2 H
peak located in the wavenumber … InxGa1–xN layers investigated by systematic spectroscopy …
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[PDF] academia.edu

[PDF][PDF] Gucmann, F.,... Kuzmík, J.(2019). Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD. Journal …

P Chauhan, S Hasenöhrl, E Dobroka, MP Chauvat… - academia.edu
… and likewise experimental Raman scattering data, we performed Raman spectroscopy. In …
Artús, Raman scattering by the E2ℎ and A1(LO) phonons of InGaN epilayers (0.25 < x < 0.75) …
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