Achieving porous germanium from both p-and n-type epitaxial Ge-on-Si via bipolar potentiostatic etching

Y Zhu, Y Zhang, B Li, GM Xia, RT Wen - Electrochimica Acta, 2023 - Elsevier
Due to the large surface specific area, tunable porosity and refractive index, porous
germanium (Ge) has wide applications in optoelectronics, photovoltaics, anode materials in …

Large‐Scale Formation of Uniform Porous Ge Nanostructures with Tunable Physical Properties

T Hanuš, J Arias‐Zapata, B Ilahi… - Advanced Materials …, 2023 - Wiley Online Library
Porous germanium (PGe) nanostructures attract a lot of attention for various emerging
applications due to their unique properties. Consequently, there is an increasing need for …

Anti-reflective porous Ge by open-circuit and lithography-free metal-assisted chemical etching

YY Zhang, SH Shin, HJ Kang, S Jeon, SH Hwang… - Applied Surface …, 2021 - Elsevier
Abstract Porous Ge (PGe) layer is formed on single-crystalline Ge (c-Ge) as well as in a
releasable form (eg, free-standing PGe) by lithography-free metal-assisted chemical etching …

Fast growth synthesis of mesoporous germanium films by high frequency bipolar electrochemical etching

YA Bioud, A Boucherif, A Belarouci, E Paradis… - Electrochimica …, 2017 - Elsevier
Mesoporous germanium (MP-Ge) has been predicted to play an important role in a wide
range of potential applications. These porous Ge networks are characterized by physical …

Electrochemical pore etching in Ge–An overview

C Fang, H Föll, J Carstensen… - Physica status solidi (a), 2007 - Wiley Online Library
While electrochemical pore etching in semiconductors has become a thriving field for
research (and applications) in the past 15 years or so, little work has been done in Ge …

Producing Microscale Ge Textures via Titanium Nitride‐and Nickel‐Assisted Chemical Etching with CMOS‐Compatibility

Y Liao, SH Shin, Y Jin, QJ Wang… - Advanced Materials …, 2021 - Wiley Online Library
As an emerging anisotropic wet etching technique, metal‐assisted chemical etching
(MacEtch) has been widely employed for fabricating nano‐and micro‐structures of …

The effect of passivation to etching duration ratio on bipolar electrochemical etching of porous layer stacks in germanium

W Schreiber, T Liu, S Janz - Journal of Physics and Chemistry of Solids, 2023 - Elsevier
The effect of the passivation to etching duration ratio on the bipolar electrochemical etching
of highly p-doped germanium on its pore structures has been investigated. The final goal is …

III-V material growth on electrochemically porosified Ge substrates

E Winter, W Schreiber, P Schygulla, PL Souza… - Journal of Crystal …, 2023 - Elsevier
III-V semiconductor materials for high-efficiency multi-junction solar cells are often grown on
germanium (Ge) substrates. However, apart from being considered as a rare element, Ge …

Room temperature Ge and ZnO embedded inside porous silicon using conventional methods for photonic application

AF Abd Rahim, MR Hashim, M Rusop, NK Ali… - Superlattices and …, 2012 - Elsevier
In this paper we reported room temperature synthesis of embedded porous Si (PS) based
structures using simple and low cost techniques of electrochemical etching and thermal …

Optical properties of nanoporous germanium thin films

D Cavalcoli, G Impellizzeri, L Romano… - … applied materials & …, 2015 - ACS Publications
In the present article we report enhanced light absorption, tunable size-dependent blue shift,
and efficient electron–hole pairs generation in Ge nanoporous films (np-Ge) grown on Si …