Performance of III–V solar cells grown on reformed mesoporous Ge templates
A Cavalli, N Alkurd, S Johnston… - IEEE Journal of …, 2021 - ieeexplore.ieee.org
We demonstrate a solar cell on reformed porous Ge with an efficiency of 7.7%. We generate
mesopores in (100) Ge by bipolar electrochemical etching and anneal them at high …
mesopores in (100) Ge by bipolar electrochemical etching and anneal them at high …
Reformed mesoporous Ge for substrate reuse in III-V solar cells
Mesoporous Ge was generated by bipolar electrochemical etching of (100) Ge. Through
high-temperature annealing experiments, we found that the mesoporous Ge microstructure …
high-temperature annealing experiments, we found that the mesoporous Ge microstructure …
Epitaxial growth of detachable GaAs/Ge heterostructure on mesoporous Ge substrate for layer separation and substrate reuse
Currently, III-V multijunction solar cells holds the highest efficiency. However, they are
expensive to produce and this prevents their large-scale use. For single GaAs solar cells …
expensive to produce and this prevents their large-scale use. For single GaAs solar cells …
Porous germanium layers by electrochemical etching for layer transfer processes of high-efficiency multi-junction solar cells
EG Rojas, J Hensen, J Carstensen, H Föll… - ECS …, 2011 - iopscience.iop.org
We demonstrate reproducible formation of mesoporous germanium layers suitable for solar
energy applications by electrochemical etching in highly concentrated electrolytes. For long …
energy applications by electrochemical etching in highly concentrated electrolytes. For long …
Direct growth of GaAs solar cells on Si substrate via mesoporous Si buffer
ABP Mbeunmi, M El-Gahouchi, R Arvinte… - Solar Energy Materials …, 2020 - Elsevier
Abstract Due to Silicon (Si) material abundance and lower cost, integration of high efficiency
III-V solar cells on Si substrates is of major importance for future solar energy harvesting …
III-V solar cells on Si substrates is of major importance for future solar energy harvesting …
Germanium-on-nothing for epitaxial liftoff of GaAs solar cells
Solar cells from III-V materials offer outstanding light conversion efficiency and power
densities and have a proven reliability record. Nevertheless, the utilization of III-V devices …
densities and have a proven reliability record. Nevertheless, the utilization of III-V devices …
III-V material growth on electrochemically porosified Ge substrates
E Winter, W Schreiber, P Schygulla, PL Souza… - Journal of Crystal …, 2023 - Elsevier
III-V semiconductor materials for high-efficiency multi-junction solar cells are often grown on
germanium (Ge) substrates. However, apart from being considered as a rare element, Ge …
germanium (Ge) substrates. However, apart from being considered as a rare element, Ge …
Multiple substrate reuse: A straightforward reconditioning of Ge wafers after porous separation
A Chapotot, J Arias-Zapata, T Hanuš… - 2022 IEEE 49th …, 2022 - ieeexplore.ieee.org
Epitaxial thin film detachment and substrate reuse is one of the promising approaches to
reduce the weight and the cost of triple junction (3J) solar cells on Ge substrate for both …
reduce the weight and the cost of triple junction (3J) solar cells on Ge substrate for both …
Lift-off of porous germanium layers
EG Rojas, J Hensen, J Carstensen… - Journal of The …, 2011 - iopscience.iop.org
We demonstrate reproducible formation of mesoporous germanium layers suitable for solar
energy applications by electrochemical etching in highly concentrated electrolytes. For long …
energy applications by electrochemical etching in highly concentrated electrolytes. For long …
III–V solar cells grown on unpolished and reusable spalled Ge substrates
Substrate reuse offers a promising route toward enabling high-efficiency III-V solar cells to
become cost-competitive for one-sun terrestrial applications. In this study, Ge films were …
become cost-competitive for one-sun terrestrial applications. In this study, Ge films were …