Due to the manufacturability of highly well‐defined structures and wide‐range versatility in
its microstructure, SiO2 is an attractive template for synthesizing graphene frameworks with …

Graphene is the strongest material ever identified. However, the fabrication of graphene-
based bulk materials from graphene powders presents a significant challenge. Here, a new …

The performance of graphene devices is often limited by defects and impurities induced
during device fabrication. Polymer residue left on the surface of graphene after photoresist …

Understanding the growth of graphene over Si species is becoming ever more important as
the huge potential for the combination of these two materials becomes more apparent, not …

To incorporate graphene layers into a complementary metal oxide semiconductor (CMOS),
various growth techniques are needed, such as direct and selective growth at a low …

Graphene is a key material of interest for the modification of physicochemical surface
properties. However, its flat surface is a limitation for applications requiring a high specific …

Noble metals such as Pt are a perfect substrate for the catalytic growth of monolayer
graphene. However, the requirements of the subsequent transfer process are not compatible …

A systematic study shows that continuous graphene with controllable number of layers and
stacking structure can be directly grown on SiO 2/Si without any metal catalysts by chemical …

Increased interactions at the graphene–metal interface are here demonstrated to yield an
effective prevention of intercalation of foreign species below the graphene cover. Hereby, an …

Direct growth of high-quality graphene on dielectric substrates without a sophisticated
transfer process is one of the key challenges to effectively integrate graphene synthesis with …