Abstract Recently, porous Germanium (PGe) structures have gained significant attention as
a promising engineering material for a broad range of applications due to the versatility of its …

Porous germanium (PGe) nanostructures attract a lot of attention for various emerging
applications due to their unique properties. Consequently, there is an increasing need for …

Abstract Porous Germanium (PGe) has emerged as a promising material for applications
such as substrate engineering, sensing, and energy storage, thanks to its uniquely versatile …

Mesoporous germanium has received lately a growing interest in many fields. However, the
lack of flexibility and knowledge concerning its electrochemical etching remains important. In …

We present the reproducible fabrication of porous germanium (PGe) single‐and multilayers.
Mesoporous layers form on heavily doped 4” p‐type Ge wafers by electrochemical etching in …

In this work, we have systematically studied the influence of the etching parameters such as:
current density, electrolyte concentration, anodic/cathodic pulse duration, pore initiation on p …

Mesoporous germanium (MP-Ge) has been predicted to play an important role in a wide
range of potential applications. These porous Ge networks are characterized by physical …

The effect of the passivation to etching duration ratio on the bipolar electrochemical etching
of highly p-doped germanium on its pore structures has been investigated. The final goal is …

We produce uniform mesoporous single-and multilayers on 4in. p-type Ge wafers by means
of electrochemical etching in highly concentrated HF-based electrolytes. Pore formation by …

Weight reduction of multi-junction III-V semiconductor solar cells is an important budget
issue for space applications. Typically, space solar cells are epitaxially formed on a Ge or …