The effect of the passivation to etching duration ratio on the bipolar electrochemical etching
of highly p-doped germanium on its pore structures has been investigated. The final goal is …

We present the reproducible fabrication of porous germanium (PGe) single‐and multilayers.
Mesoporous layers form on heavily doped 4” p‐type Ge wafers by electrochemical etching in …

Nucleation and growth of electrochemically etched pores in Germanium (Ge) was
investigated for n-and p-type Ge single crystals with {100},{110}, and {111} orientations and …

We produce uniform mesoporous single-and multilayers on 4in. p-type Ge wafers by means
of electrochemical etching in highly concentrated HF-based electrolytes. Pore formation by …

Little was known about porous Ge until recently; here some substantial progress in
producing porous Ge will be reported, mostly for the first time. i) n-type Ge in aqueous …

Uniform thick mesoporous germanium layers are reproducibly formed on 4 in. p-type Ge
wafers by electrochemical etching in highly concentrated HF electrolytes. Pore formation by …

The formation of mesoporous Ge layers with different morphologies by bipolar
electrochemical etching is reported for the first time. A detailed analysis of the effect of …

While electrochemical pore etching in semiconductors has become a thriving field for
research and applications in the past 15 years or so, little work has been done in Ge …

Nucleation and growth of electrochemically obtained pores on (111) and (100) oriented n‐
Ge in different electrolytes was investigated. On rough surfaces pore density increases as …

While electrochemical pore etching in semiconductors has become a thriving field for
research (and applications) in the past 15 years or so, little work has been done in Ge …