Growth and Characterization of Liquid‐Phase Epitaxial InAs1−xPx
GA Antypas, TO Yep - Journal of Applied Physics, 1971 - pubs.aip.org
Liquid‐phase epitaxial layers of InAs1− x P x were grown in the range of 0< x< 0. 735 on
{1̄1̄1̄} InP substrates. The ternary phase diagram was calculated using Darken's …
{1̄1̄1̄} InP substrates. The ternary phase diagram was calculated using Darken's …
Growth and Characterization of Liquid-Phase Epitaxial InAs1-xPx
GA Antypas, TO Yep - Journal of Applied Physics, 1971 - ui.adsabs.harvard.edu
Liquid-phase epitaxial layers of InAs 1-x P x were grown in the range of 0< x< 0. 735 on {1 1
1} InP substrates. The ternary phase diagram was calculated using Darken's quadratic …
1} InP substrates. The ternary phase diagram was calculated using Darken's quadratic …
Growth and Characterization of Liquid‐Phase Epitaxial InAs1− xPx
GA Antypas, TO Yep - Journal of Applied Physics, 1971 - pubs.aip.org
Liquid-phase epitaxial layers of lnAs1-" P" were grown in the range of O< x< O. 735 on {iii}
InP substrates. The ternary phase diagram was calculated using Darken's quadratic …
InP substrates. The ternary phase diagram was calculated using Darken's quadratic …
Growth and Characterization of Liquid-Phase Epitaxial InAs1−xPx
GA Antypas, TO Yep - Journal of Applied Physics, 1971 - cir.nii.ac.jp
抄録< jats: p> Liquid-phase epitaxial layers of InAs1− xPx were grown in the range of 0 < x
< 0. 735 on {1̄1̄1̄} InP substrates. The ternary phase diagram was calculated using …
< 0. 735 on {1̄1̄1̄} InP substrates. The ternary phase diagram was calculated using …
[引用][C] Growth and characterization of liquid-phase epitaxial InAs_xP_< 1-x
GA ANTYPAS - J. Appl. Phys., 1971 - cir.nii.ac.jp