Infrared‐visible (0.89–0.72 μm) AlxGa1−xAs/AlyGa1−yAs double‐heterostructure lasers grown by molecular beam epitaxy
WT Tsang - Journal of Applied Physics, 1980 - pubs.aip.org
Room‐temperature low‐current‐threshold broad‐area Fabry‐Perot Al x Ga1− x As/Al y
Ga1− y As double‐heterostructure (DH) lasers have been prepared by molecular‐beam …
Ga1− y As double‐heterostructure (DH) lasers have been prepared by molecular‐beam …
Infrared-visible (0. 89--0. 72. mu. m) Al/sub x/Ga/sub 1-x/As/Al/sub y/Ga/sub 1-y/As double-heterostructure lasers grown by molecular beam epitaxy
WT Tsang - J. Appl. Phys.;(United States), 1980 - osti.gov
Room-temperature low-current-threshold broad-area Fabry-Perot Al/sub x/Ga/sub 1-
x/As/Al/sub y/Ga/sub 1-y/As double-heterostructure (DH) lasers have been prepared by …
x/As/Al/sub y/Ga/sub 1-y/As double-heterostructure (DH) lasers have been prepared by …
[引用][C] INFRARED VISIBLE (0.89-0.72 MU M) ALXGA1-XAS/ALYGA1-YAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR BEAM EPITAXY
WT TSANG - 1980 - pascal-francis.inist.fr
INFRARED VISIBLE (0.89-0.72 MU M) ALXGA1-XAS/ALYGA1-YAS DOUBLE-HETEROSTRUCTURE
LASERS GROWN BY MOLECULAR BEAM EPITAXY CNRS Inist Pascal-Francis CNRS …
LASERS GROWN BY MOLECULAR BEAM EPITAXY CNRS Inist Pascal-Francis CNRS …
Infrared‐visible (0.89–0.72 μm) AlxGa1− xAs/AlyGa1− yAs double‐heterostructure lasers grown by molecular beam epitaxy
WT Tsang - Journal of Applied Physics, 1980 - pubs.aip.org
Room‐temperature low‐current‐threshold broad‐area Fabry‐Perot Al x Ga 1− x As/Al y Ga
1− y As double‐heterostructure (DH) lasers have been prepared by molecular‐beam epitaxy …
1− y As double‐heterostructure (DH) lasers have been prepared by molecular‐beam epitaxy …
Infrared-visible (0.89–0.72 μm) AlxGa1−xAs/AlyGa1−yAs double-heterostructure lasers grown by molecular beam epitaxy
WT Tsang - Journal of Applied Physics, 1980 - cir.nii.ac.jp
抄録< jats: p> Room-temperature low-current-threshold broad-area Fabry-Perot AlxGa1−
xAs/AlyGa1− y As double-heterostructure (DH) lasers have been prepared by molecular …
xAs/AlyGa1− y As double-heterostructure (DH) lasers have been prepared by molecular …
Infrared-visible (0.89-0.72 μm) AlxGa1-xAs/AlyGa1-yAs double-heterostructure lasers grown by molecular beam epitaxy
WT Tsang - Journal of Applied Physics, 1980 - ui.adsabs.harvard.edu
Room-temperature low-current-threshold broad-area Fabry-Perot Al x Ga 1-x As/Al y Ga 1-y
As double-heterostructure (DH) lasers have been prepared by molecular-beam epitaxy …
As double-heterostructure (DH) lasers have been prepared by molecular-beam epitaxy …