MOVPE in Ga In As P systems for opto-electronic applications

D Grützmacher, M Glade - Microelectronic engineering, 1992 - Elsevier
We have studied the capabilities of the growth of quantum well structures in the Ga In
As P material system by metalorganic vapor phase epitaxy (MOVPE) for optical …
被引用次数：9 相关文章

[引用][C] MOVPE in Ga-In-As-P systems for opto-electronic applications

D GRÜTZMACHER, M GLADE - Microelectronic engineering, 1992 - pascal-francis.inist.fr
MOVPE in Ga-In-As-P systems for opto-electronic applications CNRS Inist Pascal-Francis CNRS
Pascal and Francis Bibliographic Databases Simple search Advanced search Search by …

[引用][C] MOVPE in Ga-In-As-P systems for opto-electronic applications

D Grützmacher, M Glade - Microelectronic Engineering, 1992 - dl.acm.org
MOVPE in Ga-In-As-P systems for opto-electronic applications | Microelectronic Engineering
skip to main content ACM Digital Library home ACM home Google, Inc. (search) Advanced …

[引用][C] MOVPE in Ga− In− As− P systems for opto-electronic applications

D GRÜTZMACHER, M GLADE - Microelectronic engineering, 1992 - Elsevier