Selective MOCVD growth of GaAlAs on partly masked substrates and its application to optoelectronic devices

Y Takahashi, S Sakai, M Umeno - Journal of Crystal Growth, 1984 - Elsevier
The detailed observations of selective MOCVD growth of Ga 1− x Al x Al x As on substrates
partly masked by a SiO 2 film were carrie out in the complete range of AlAs fraction x. The …
被引用次数：59 相关文章

Selective MOCVD growth of GaAlAs on partly masked substrates and its application to optoelectronic devices

Y Takahashi, S Sakai, M Umeno - Journal of Crystal Growth, 1984 - ui.adsabs.harvard.edu
The detailed observations of selective MOCVD growth of Ga 1-x Al x Al x As on substrates
partly masked by a SiO 2 film were carrie out in the complete range of AlAs fraction x. The …

[引用][C] Selective MOCVD growth of GaAlAs on partly masked substrates and its application to optoelectronic devices

Y Takahashi, S Sakai, M Umeno - Journal of Crystal Growth, 1984 - cir.nii.ac.jp
Selective MOCVD growth of GaAlAs on partly masked substrates and its application to
optoelectronic devices | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] …