Band alignment of InAs1− xSbx (0.05< x< 0.13)/InAs0. 67P0. 23Sb0. 10 heterostructures

CJ Wu, G Tsai, HH Lin - Applied Physics Letters, 2009 - pubs.aip.org
We determined the unstrained conduction-band and valence-band edge energies of InAs 1−
x Sb x (0.05< x< 0.13) by fitting the photoluminescence peak energy of InAsSb/InAs 0.67 P …
被引用次数：9 相关文章

[引用][C] Band alignment of InAs1-xSbx (0.05? x? 0.13)/InAs0. 67P0. 23Sb0. 10 heterostructures

CJ Wu, G Tsai, HH Lin - Applied Physics Letters, 2009 - ntur.lib.ntu.edu.tw
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Band alignment of InAs1-xSbx (0.05<x<0.13)/InAs0.67P0.23Sb0.10 heterostructures

CJ Wu, G Tsai, HH Lin - Applied Physics Letters, 2009 - ui.adsabs.harvard.edu
We determined the unstrained conduction-band and valence-band edge energies of InAs1-
xSbx (0.05< x< 0.13) by fitting the photoluminescence peak energy of InAsSb/InAs0. 67P0 …

Band alignment of InAs1− xSbx (0.05< x< 0.13)/InAs0. 67P0. 23Sb0. 10 heterostructures

CJ Wu, G Tsai, HH Lin - Applied Physics Letters, 2009 - pubs.aip.org
We determined the unstrained conduction-band and valence-band edge energies of InAs1−
xSbx (0.05x 0.13) by fitting the photoluminescence peak energy of InAsSb/InAs0. 67P0 …

Band alignment of InAs1-xSbx (0.05<x<0.13)/InAs0.67P0.23Sb0.10 heterostructures

CJ Wu, G Tsai, HH Lin - Applied Physics Letters, 2009 - elibrary.ru
We determined the unstrained conduction-band and valence-band edge energies of InAs 1-
x Sb x (0.05 by fitting the photoluminescence peak energy of InAsSb/InAs 0.67 P 0.23 Sb …

[引用][C] Band alignment of InAs1―xSbx (0.05< x< 0.13)

CJ WU, G TSAI, HH LIN - Applied physics letters, 2009 - American Institute of Physics