Resilience of monolayer MoS2 memtransistor under heavy ion irradiation

CM Smyth, JM Cain, EJ Lang, P Lu, X Yan… - Journal of Materials …, 2022 - Springer
Due to its unique gate-tunable non-volatility, the memtransistor is a promising component for
low-energy neuromorphic computing. The grain boundary-and point defect-enabled …
被引用次数：5 相关文章

[引用][C] Resilience of monolayer MoS2 memtransistor under heavy ion irradiation

CM Smyth, JM Cain, EJ Lang, P Lu… - Journal of Materials …, 2022 - ui.adsabs.harvard.edu
Resilience of monolayer MoS<SUB>2</SUB> memtransistor under heavy ion irradiation -
NASA/ADS Now on home page ads icon ads Enable full ADS view NASA/ADS Resilience of …

Resilience of monolayer MoS2 memtransistor under heavy ion irradiation

CM Smyth, JM Cain, EJ Lang, P Lu… - Journal of …, 2022 - scholars.northwestern.edu
Due to its unique gate-tunable non-volatility, the memtransistor is a promising component for
low-energy neuromorphic computing. The grain boundary-and point defect-enabled …

Resilience of monolayer MoS2 memtransistor under heavy ion irradiation

CM Smyth, JM Cain, EJ Lang, P Lu… - Default …, 2022 - lanlexperts.elsevierpure.com
Due to its unique gate-tunable non-volatility, the memtransistor is a promising component for
low-energy neuromorphic computing. The grain boundary-and point defect-enabled …
[PDF] researchgate.net

[PDF][PDF] Resilience of Monolayer MoS2 Memtransistor under Heavy Ion Irradiation

CM Smyth, JM Cain, EJ Lang, P Lu, X Yan, SE Liu… - researchgate.net
Atomic sensitivity factors for the Mo 3d (3.585) and S 2p (0.723) are employed to correct the
integrated intensities of all chemical states in this work. The atomic sensitivity factors listed …