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Silicon oxidation and ultra‐thin oxide formation on silicon studied by infrared absorption spectroscopy

KT Queeney, YJ Chabal, MK Weldon… - … status solidi (a), 1999 - Wiley Online Library
An experimental method, based on infrared absorption spectroscopy, has been developed
to study ultra‐thin passivating layers on semiconductor surfaces. To characterize the …
被引用次数：36 相关文章

[引用][C] Silicon Oxidation and Ultra-Thin Oxide Formation on Silicon Studied by Infrared Absorption Spectroscopy

KT Queeney, YJ Chabal, MK Weldon… - Physica Status …, 1999 - ui.adsabs.harvard.edu
Silicon Oxidation and Ultra-Thin Oxide Formation on Silicon Studied by Infrared Absorption
Spectroscopy - NASA/ADS Now on home page ads icon ads Enable full ADS view NASA/ADS …
[PDF] academia.edu

[PDF][PDF] Silicon Oxidation and Ultra-Thin Oxide Formation on Silicon Studied by Infrared Absorption Spectroscopy

KT Queeney, YJ Chabal, MK Weldon… - phys. stat. sol.(a …, 1999 - academia.edu
An experimental method, based on infrared absorption spectroscopy, has been developed
to study ultra-thin passivating layers on semiconductor surfaces. To characterize the …
[PDF] academia.edu

[PDF][PDF] Silicon Oxidation and Ultra-Thin Oxide Formation on Silicon Studied by Infrared Absorption Spectroscopy

KT Queeney, YJ Chabal, MK Weldon… - phys. stat. sol.(a …, 1999 - academia.edu
An experimental method, based on infrared absorption spectroscopy, has been developed
to study ultra-thin passivating layers on semiconductor surfaces. To characterize the …