Low-Pressure Metallo-Organic Chemical Vapor Deposition of GaxIn1− xAsyP1− y Alloys
M Razeghi - Semiconductors and Semimetals, 1985 - Elsevier
Publisher Summary This chapter discusses that metallo-organic chemical vapor deposition
(MOCVD) has emerged as a valuable tool for the growth of device-quality epitaxial layers of …
(MOCVD) has emerged as a valuable tool for the growth of device-quality epitaxial layers of …
Low-Pressure Metallo-Organic Chemical Vapor Deposition of GaxIn1− xAsyP1− y Alloys
M Razeghi - Semiconductors and Semimetals, 1985 - scholars.northwestern.edu
This chapter discusses that metallo-organic chemical vapor deposition (MOCVD) has
emerged as a valuable tool for the growth of device-quality epitaxial layers of InP, G 0.47 In …
emerged as a valuable tool for the growth of device-quality epitaxial layers of InP, G 0.47 In …
Vapor Deposition of Ga, In, MAs, Pi—y Alloys
M Razeghi - Semiconductors and Semimetals, 1985 - books.google.com
The growth of semiconductor III-V compounds by chemical vapor deposition (CVD) using
organometallics and hydrides as elemental Sources has developed into a viable process …
organometallics and hydrides as elemental Sources has developed into a viable process …