Formation of low resistivity ohmic contacts to n-type 3C-SiC

J Wan, MA Capano, MR Melloch - Solid-State Electronics, 2002 - Elsevier
In this study, the dependence of nickel contacts to n-type 3C-SiC on anneal temperature is
characterized by the linear transmission line method. It is found that Ni contacts begin to …
被引用次数：52 相关文章

Formation of low resistivity ohmic contacts to n-type 3C-SiC

J Wan, MA Capano, MR Melloch - Solid-State Electronics, 2002 - elibrary.ru
In this study, the dependence of nickel contacts to n-type 3C-SiC on anneal temperature is
characterized by the linear transmission line method. It is found that Ni contacts begin to …

Formation of low resistivity ohmic contacts to n-type 3C-SiC

J Wan, MA Capano, MR Melloch - Solid State Electronics, 2002 - infona.pl
In this study, the dependence of nickel contacts to n-type 3C-SiC on anneal temperature is
characterized by the linear transmission line method. It is found that Ni contacts begin to …

Formation of low resistivity ohmic contacts to n-type 3C-SiC

J Wan, MA Capano, MR Melloch - Solid State Electronics, 2002 - ui.adsabs.harvard.edu
In this study, the dependence of nickel contacts to n-type 3C-SiC on anneal temperature is
characterized by the linear transmission line method. It is found that Ni contacts begin to …