Advances in high-k dielectric gate materials for future ULSI devices
This article discusses recent developments in high dielectric constant gate insulator
materials for future ultra-large-scale integration devices below 100 nm. Since conventional …
materials for future ultra-large-scale integration devices below 100 nm. Since conventional …
Advances in high-k dielectric gate materials for future ULSI devices
RK Sharma, A Kumar… - JOM-Journal of the …, 2001 - ui.adsabs.harvard.edu
This article discusses recent developments in high dielectric constant gate insulator
materials for future ultra-large-scale integration devices below 100 nm. Since conventional …
materials for future ultra-large-scale integration devices below 100 nm. Since conventional …
Advances in high-k dielectric gate materials for future ULSI devices
RK Sharma, A Kumar, JM Anthony - JOM, 2001 - infona.pl
This article discusses recent developments in high dielectric constant gate insulator
materials for future ultra-large-scale integration devices below 100 nm. Since conventional …
materials for future ultra-large-scale integration devices below 100 nm. Since conventional …
Advances in high-k dielectric gate materials for future ULSI devices
RK Sharma, A Kumar, JM Anthony - JOM, 2001 - search.proquest.com
When channel length of the metal-oxide semiconductor field effect transistors (MOSFETs) is
scaled down to below 100 nm with SiO2 gate-oxide thickness of 2 nm, the gate-leakage …
scaled down to below 100 nm with SiO2 gate-oxide thickness of 2 nm, the gate-leakage …