Light-induced hysteresis of In–Ga–Zn–O thin-film transistors with various temperatures

SH Kuk, SY Lee, SJ Kim, B Kim, SJ Park… - IEEE electron device …, 2012 - ieeexplore.ieee.org
We investigated the hysteresis phenomenon in In-Ga-Zn-O thin-film transistors under light
illumination. Hysteresis was observed under the 450-nm illumination and was increased …

[PDF][PDF] Light-Induced Hysteresis of In–Ga–Zn–O Thin-Film Transistors With Various Temperatures

SH Kuk, SY Lee, SJ Kim, B Kim, SJ Park… - IEEE ELECTRON …, 2012 - researchgate.net
RECENTLY, amorphous indium–gallium–zinc–oxide thin-film transistors (a-IGZO TFTs)
have attracted considerable attention due to their high mobility and good uniformity [1],[2] …

[引用][C] Light-Induced Hysteresis of In-Ga-Zn-O Thin-Film Transistors With Various Temperatures

SH Kuk, SY Lee, SJ Kim, B Kim… - IEEE Electron …, 2012 - ui.adsabs.harvard.edu
Light-Induced Hysteresis of In-Ga-Zn-O Thin-Film Transistors With Various Temperatures -
NASA/ADS Now on home page ads icon ads Enable full ADS view NASA/ADS Light-Induced …

[引用][C] Light-Induced Hysteresis of In-Ga-Zn-O Thin-Film Transistors With Various Temperatures

SH KUK, SY LEE, SJ KIM, B KIM… - IEEE electron device …, 2012 - pascal-francis.inist.fr
Light-Induced Hysteresis of In-Ga-Zn-O Thin-Film Transistors With Various Temperatures
CNRS Inist Pascal-Francis CNRS Pascal and Francis Bibliographic Databases Simple …

[PDF][PDF] Light-Induced Hysteresis of In–Ga–Zn–O Thin-Film Transistors With Various Temperatures

SH Kuk, SY Lee, SJ Kim, B Kim, SJ Park… - IEEE ELECTRON …, 2012 - scholar.archive.org
RECENTLY, amorphous indium–gallium–zinc–oxide thin-film transistors (a-IGZO TFTs)
have attracted considerable attention due to their high mobility and good uniformity [1],[2] …

Light-induced hysteresis of In-Ga-Zn-O thin-film transistors with various temperatures

SH Kuk, SY Lee, SJ Kim, B Kim… - IEEE Electron …, 2012 - yonsei.elsevierpure.com
We investigated the hysteresis phenomenon in In-Ga-Zn-O thin-film transistors under light
illumination. Hysteresis was observed under the 450-nm illumination and was increased …

[引用][C] Light-Induced Hysteresis of In–Ga–Zn–O Thin-Film Transistors With Various Temperatures

SH Kuk, SY Lee, SJ Kim, B Kim, SJ Park… - IEEE Electron Device …, 2012 - cir.nii.ac.jp
Light-Induced Hysteresis of In–Ga–Zn–O Thin-Film Transistors With Various Temperatures |
CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ …

Light-Induced Hysteresis of In–Ga–Zn–O Thin-Film Transistors With Various Temperatures

SH Kuk, SY Lee, SJ Kim, B Kim, SJ Park… - IEEE Electron Device …, 2012 - infona.pl
We investigated the hysteresis phenomenon in In–Ga–Zn–O thin-film transistors under light
illumination. Hysteresis was observed under the 450-nm illumination and was increased …

[PDF][PDF] Light-Induced Hysteresis of In–Ga–Zn–O Thin-Film Transistors With Various Temperatures

SH Kuk, SY Lee, SJ Kim, B Kim, SJ Park… - IEEE ELECTRON …, 2012 - scholar.archive.org
RECENTLY, amorphous indium–gallium–zinc–oxide thin-film transistors (a-IGZO TFTs)
have attracted considerable attention due to their high mobility and good uniformity [1],[2] …

[引用][C] Light-Induced Hysteresis of In-Ga-Zn-O Thin-Film Transistors With Various Temperatures

SH KUK, SY LEE, SJ KIM, B KIM… - IEEE electron …, 2012 - Institute of Electrical and Electronics …