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[HTML][HTML] High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si

D Jung, J Norman, MJ Kennedy, C Shang… - Applied Physics …, 2017 - pubs.aip.org
We demonstrate highly efficient, low threshold InAs quantum dot lasers epitaxially grown on
on-axis (001) GaP/Si substrates using molecular beam epitaxy. Electron channeling contrast …
被引用次数：155 相关文章

High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si

D Jung, J Norman, MJ Kennedy… - Applied Physics …, 2017 - ui.adsabs.harvard.edu
We demonstrate highly efficient, low threshold InAs quantum dot lasers epitaxially grown on
on-axis (001) GaP/Si substrates using molecular beam epitaxy. Electron channeling contrast …

High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si

D Jung, J Norman, MJ Kennedy, C Shang… - Applied Physics …, 2017 - pubs.aip.org
We demonstrate highly efficient, low threshold InAs quantum dot lasers epitaxially grown on
onaxis (001) GaP/Si substrates using molecular beam epitaxy. Electron channeling contrast …

High efficiency low threshold current 1.3 μ m InAs quantum dot lasers on on-axis (001) GaP/Si

D Jung, J Norman, MJ Kennedy, C Shang, B Shin… - Applied Physics …, 2017 - osti.gov
We demonstrate highly efficient, low threshold InAs quantum dot lasers epitaxially grown on
on-axis (001) GaP/Si substrates using molecular beam epitaxy. Electron channeling contrast …

[引用][C] High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si

D Jung, J Norman, MJ Kennedy, C Shang, B Shin… - Applied Physics …, 2017 - cir.nii.ac.jp
High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si |
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