Chemical vapor deposition growth of graphene on 200 mm Ge (110)/Si Wafers and Ab Initio analysis of differences in growth mechanisms on Ge (110) and Ge (001)

F Akhtar, J Dabrowski, R Lukose… - … Applied Materials & …, 2023 - ACS Publications
For the fabrication of modern graphene devices, uniform growth of high-quality monolayer
graphene on wafer scale is important. This work reports on the growth of large-scale …

Chemical Vapor Deposition Growth of Graphene on 200 mm Ge (110)/Si Wafers and Ab Initio Analysis of Differences in Growth Mechanisms on Ge (110) and Ge (001 …

F Akhtar, J Dabrowski, R Lukose, C Wenger… - … Applied Materials & …, 2023 - europepmc.org
For the fabrication of modern graphene devices, uniform growth of high-quality monolayer
graphene on wafer scale is important. This work reports on the growth of large-scale …

Chemical Vapor Deposition Growth of Graphene on 200 mm Ge (110)/Si Wafers and Ab Initio Analysis of Differences in Growth Mechanisms on Ge (110) and Ge (001 …

F Akhtar, J Dabrowski, R Lukose… - … applied materials & …, 2023 - pubmed.ncbi.nlm.nih.gov
For the fabrication of modern graphene devices, uniform growth of high-quality monolayer
graphene on wafer scale is important. This work reports on the growth of large-scale …

[HTML][HTML] Chemical Vapor Deposition Growth of Graphene on 200 mm Ge (110)/Si Wafers and Ab Initio Analysis of Differences in Growth Mechanisms on Ge (110) and …

F Akhtar, J Dabrowski, R Lukose… - … Applied Materials & …, 2023 - ncbi.nlm.nih.gov
For the fabrication of modern graphene devices, uniform growth of high-quality monolayer
graphene on wafer scale is important. This work reports on the growth of large-scale …

Chemical Vapor Deposition Growth of Graphene on 200 mm Ge (110)/Si Wafers and Ab Initio Analysis of Differences in Growth Mechanisms on Ge (110) and Ge (001 …

F Akhtar, J Dabrowski, R Lukose, C Wenger… - 2023 - opus4.kobv.de
For the fabrication of modern graphene devices, uniform growth of high-quality monolayer
graphene on wafer scale is important. This work reports on the growth of large-scale …