High-power high-efficiency 0.98-/spl mu/m wavelength InGaAs-(In) GaAs (P)-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxy

IEEE journal of quantum electronics, 1997 - ieeexplore.ieee.org
We describe the design and experimental results for high-power, high-efficiency, low
threshold current, 0.98-/spl mu/m wavelength, broadened waveguide (BW) aluminum-free …
被引用次数：70 相关文章

[引用][C] High-power high-efficiency 0.98-μm wavelength InGaAs-(In) GaAs (P)-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxy

MR GOKHALE, JC DRIES… - IEEE journal of …, 1997 - pascal-francis.inist.fr
High-power high-efficiency 0.98-μm wavelength InGaAs-(In)GaAs(P)-InGaP broadened waveguide
lasers grown by gas-source molecular beam epitaxy CNRS Inist Pascal-Francis CNRS Pascal and …

[引用][C] High-power high-efficiency 0.98-μm wavelength InGaAs-(In) GaAs (P)-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxy

MR Gokhale, JC Dries, PV Studenkov… - IEEE Journal of …, 1997 - ui.adsabs.harvard.edu
High-power high-efficiency 0.98-μm wavelength InGaAs-(In)GaAs(P)-InGaP broadened
waveguide lasers grown by gas-source molecular beam epitaxy - NASA/ADS Now on home …

[引用][C] High-power high-efficiency 0.98-μm wavelength InGaAs-(In) GaAs (P)-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxy

MR Gokhale, JC Dries, PV Studenkov… - IEEE Journal of …, 1997 - cir.nii.ac.jp
High-power high-efficiency 0.98-μm wavelength InGaAs-(In)GaAs(P)-InGaP broadened
waveguide lasers grown by gas-source molecular beam epitaxy | CiNii Research CiNii 国立 …

[引用][C] High-power high-efficiency 0.98-μm wavelength InGaAs-(In) GaAs (P)-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxy

MR GOKHALE, JC DRIES… - IEEE journal …, 1997 - Institute of Electrical and Electronics …