Suppression of corner effects in wide-channel triple-gate bulk FinFETs
This paper presents a method of eliminating corner effects in triple-gate bulk FinFETs. The
parasitic device in FinFET's corners can be turned off by increasing body doping in corner …
parasitic device in FinFET's corners can be turned off by increasing body doping in corner …
[PDF][PDF] Suppression of corner effects in wide-channel triple-gate bulk FinFETs
M Poljak, V Jovanovic, T Suligoj - Microelectronic Engineering, 2010 - researchgate.net
abstract This paper presents a method of eliminating corner effects in triple-gate bulk
FinFETs. The parasitic device in FinFET's corners can be turned off by increasing body …
FinFETs. The parasitic device in FinFET's corners can be turned off by increasing body …
[引用][C] Suppression of corner effects in wide channel triple gate bulk finfets
M Poljak, V Jovanovic, T Suligoj - Microelectronic Engineering, 2010 - research.tudelft.nl
Suppression of corner effects in wide channel triple gate bulk finfets — TU Delft Research
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Suppression of corner effects in wide-channel triple-gate bulk FinFETs
M Poljak, V Jovanović, T Suligoj - Microelectronic Engineering, 2010 - infona.pl
This paper presents a method of eliminating corner effects in triple-gate bulk FinFETs. The
parasitic device in FinFET's corners can be turned off by increasing body doping in corner …
parasitic device in FinFET's corners can be turned off by increasing body doping in corner …
Suppression of Corner Effects in Wide-Channel Triple-Gate Bulk FinFETs
M Poljak, V Jovanović, T Suligoj - Microelectronic engineering, 2010 - croris.hr
Sažetak This paper presents a method of eliminating corner effects in triple-gate bulk
FinFETs. The parasitic device in FinFET's corners can be turned off by increasing body …
FinFETs. The parasitic device in FinFET's corners can be turned off by increasing body …
[引用][C] Suppression of corner effects in wide-channel triple-gate bulk FinFETs
M Poljak, V Jovanović, T Suligoj - Microelectronic Engineering, 2010 - cir.nii.ac.jp
Suppression of corner effects in wide-channel triple-gate bulk FinFETs | CiNii Research CiNii
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国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データを …
Suppression of corner effects in wide-channel triple-gate bulk FinFETs
M Poljak, V Jovanović, T Suligoj - Microelectronic Engineering, 2010 - dl.acm.org
This paper presents a method of eliminating corner effects in triple-gate bulk FinFETs. The
parasitic device in FinFET's corners can be turned off by increasing body doping in corner …
parasitic device in FinFET's corners can be turned off by increasing body doping in corner …
[引用][C] Suppression of corner effects in wide-channel triple-gate bulk FinFETs
M POLJAK, V JOVANOVIC… - Microelectronic …, 2010 - pascal-francis.inist.fr
Suppression of corner effects in wide-channel triple-gate bulk FinFETs CNRS Inist Pascal-Francis
CNRS Pascal and Francis Bibliographic Databases Simple search Advanced search Search by …
CNRS Pascal and Francis Bibliographic Databases Simple search Advanced search Search by …
Suppression of Corner Effects in Wide-Channel Triple-Gate Bulk FinFETs
M Poljak, V Jovanović, T Suligoj - Microelectronic engineering, 2010 - croris.hr
Sažetak This paper presents a method of eliminating corner effects in triple-gate bulk
FinFETs. The parasitic device in FinFET's corners can be turned off by increasing body …
FinFETs. The parasitic device in FinFET's corners can be turned off by increasing body …