Electronic and mechanical properties of graphene–germanium interfaces grown by chemical vapor deposition

B Kiraly, RM Jacobberger, AJ Mannix, GP Campbell… - Nano …, 2015 - ACS Publications
Epitaxially oriented wafer-scale graphene grown directly on semiconducting Ge substrates
is of high interest for both fundamental science and electronic device applications. To date …
被引用次数：136 相关文章
[PDF] academia.edu

[PDF][PDF] Electronic and Mechanical Properties of Graphene− Germanium Interfaces Grown by Chemical Vapor Deposition

B Kiraly, RM Jacobberger, AJ Mannix, GP Campbell… - Nano Lett, 2015 - academia.edu
Epitaxially oriented wafer-scale graphene grown directly on semiconducting Ge substrates
is of high interest for both fundamental science and electronic device applications. To date …

Electronic and Mechanical Properties of Graphene-Germanium Interfaces Grown by Chemical Vapor Deposition

B Kiraly, RM Jacobberger, AJ Mannix… - Nano …, 2015 - pubmed.ncbi.nlm.nih.gov
Epitaxially oriented wafer-scale graphene grown directly on semiconducting Ge substrates
is of high interest for both fundamental science and electronic device applications. To date …

Electronic and Mechanical Properties of Graphene-Germanium Interfaces Grown by Chemical Vapor Deposition

B Kiraly, RM Jacobberger, AJ Mannix… - Nano …, 2015 - scholars.northwestern.edu
Epitaxially oriented wafer-scale graphene grown directly on semiconducting Ge substrates
is of high interest for both fundamental science and electronic device applications. To date …

[引用][C] Electronic and Mechanical Properties of Graphene–Germanium Interfaces Grown by Chemical Vapor Deposition

B Kiraly, RM Jacobberger, AJ Mannix, GP Campbell… - Nano Letters, 2015 - cir.nii.ac.jp
Electronic and Mechanical Properties of Graphene–Germanium Interfaces Grown by Chemical
Vapor Deposition | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ …

Electronic and Mechanical Properties of Graphene-Germanium Interfaces Grown by Chemical Vapor Deposition

B Kiraly, R Jacobberger, A Mannix, G Campbell… - Bulletin of the American …, 2016 - APS
APS -APS March Meeting 2016 - Event - Electronic and Mechanical Properties of Graphene-Germanium
Interfaces Grown by Chemical Vapor Deposition American Physical Society American …
[PDF] northwestern.edu

[PDF][PDF] Electronic and Mechanical Properties of Graphene− Germanium Interfaces Grown by Chemical Vapor Deposition

B Kiraly, RM Jacobberger, AJ Mannix… - Nano …, 2015 - bedzyk.mccormick.northwestern.edu
Epitaxially oriented wafer-scale graphene grown directly on semiconducting Ge substrates
is of high interest for both fundamental science and electronic device applications. To date …

Electronic and mechanical properties of graphene-germanium interfaces grown by chemical vapor deposition

BT Kiraly, RM Jacobberger, AJ Mannix, GP Campbell… - Nano Letters, 2015 - osti.gov
Epitaxially oriented wafer-scale graphene grown directly on semiconducting Ge substrates
is of high interest for both fundamental science and electronic device applications. To date …

Electronic and Mechanical Properties of Graphene-Germanium Interfaces Grown by Chemical Vapor Deposition

B Kiraly, R Jacobberger, A Mannix… - APS March Meeting …, 2016 - ui.adsabs.harvard.edu
Epitaxial graphene grown directly on semiconducting Ge wafers holds potential for
fundamental science and electronics applications. However, since the initial demonstration …

Electronic and Mechanical Properties of Graphene-Germanium Interfaces Grown by Chemical Vapor Deposition.

B Kiraly, RM Jacobberger, AJ Mannix, GP Campbell… - Nano Letters, 2015 - europepmc.org
Epitaxially oriented wafer-scale graphene grown directly on semiconducting Ge substrates
is of high interest for both fundamental science and electronic device applications. To date …