Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications

DK Panda, TR Lenka - Journal of Semiconductors, 2017 - iopscience.iop.org
An enhancement mode p-GaN gate AlGaN/GaN HEMT is proposed and a physics based
virtual source charge model with Landauer approach for electron transport has been …
被引用次数：21 相关文章

Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications

DK Panda, TR Lenka - Journal of Semiconductors, 2017 - ui.adsabs.harvard.edu
An enhancement mode p-GaN gate AlGaN/GaN HEMT is proposed and a physics based
virtual source charge model with Landauer approach for electron transport has been …

Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications

DK Panda, TR Lenka - Journal of Semiconductors, 2017 - inis.iaea.org
[en] An enhancement mode p-GaN gate AlGaN/GaN HEMT is proposed and a physics
based virtual source charge model with Landauer approach for electron transport has been …
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[HTML][HTML] Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications

DK Panda, TR Lenka - Journal of Semiconductors, 2017 - jos.ac.cn
An enhancement mode p-GaN gate AlGaN/GaN HEMT is proposed and a physics based
virtual source charge model with Landauer approach for electron transport has been …
[HTML] jos.ac.cn

[HTML][HTML] Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications

DK Panda, TR Lenka - Journal of Semiconductors, 2017 - jos.ac.cn
An enhancement mode p-GaN gate AlGaN/GaN HEMT is proposed and a physics based
virtual source charge model with Landauer approach for electron transport has been …