Method of forming a fully substrate-isolated FinFET transistor
N Loubet, P Khare - US Patent 8,956,942, 2015 - Google Patents
Channel-to-substrate leakage in a FinFET device is prevented by inserting an insulating
layer between the semiconducting channel (fin) and the substrate during fabrication of the …
layer between the semiconducting channel (fin) and the substrate during fabrication of the …
Fully substrate-isolated finfet transistor
N Loubet, P Khare - US Patent App. 13/725,528, 2014 - Google Patents
BACKGROUND 0001 1. Technical Field 0002 The present disclosure relates to the
fabrication of integrated circuit transistors, and, in particular, low-leakage three-dimensional …
fabrication of integrated circuit transistors, and, in particular, low-leakage three-dimensional …
Method of forming a fully substrate-isolated FinFET transistor
N Loubet, P Khare - US Patent 8,956,942, 2015 - freepatentsonline.com
Channel-to-substrate leakage in a FinFET device is prevented by inserting an insulating
layer between the semiconducting channel (fin) and the substrate during fabrication of the …
layer between the semiconducting channel (fin) and the substrate during fabrication of the …
FULLY SUBSTRATE-ISOLATED FINFET TRANSISTOR
N Loubet, P Khare - US Patent App. 13/725,528, 2014 - freepatentsonline.com
Channel-to-substrate leakage in a FinFET device can be prevented by inserting an
insulating layer between the semiconducting channel (fin) and the substrate. Similarly …
insulating layer between the semiconducting channel (fin) and the substrate. Similarly …