B Hu, JO Gonzalez, L Ran, H Ren, Z Zeng… - IEEE Transactions on …, 2017 - cir.nii.ac.jp
Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si Device | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索 …
H Lu, C Bailey - IEEE Transactions on Device and Materials …, 2017 - gala.gre.ac.uk
The superior electro-thermal properties of SiC power devices permit higher temperature of operation and enable higher power density compared with silicon devices. Nevertheless …
B Hu, JA Ortiz Gonzalez, L Ran, H Ren… - … on Device and …, 2017 - wrap.warwick.ac.uk
The superior electro-thermal properties of SiC power devices permit higher temperature of operation and enable higher power density compared with silicon devices. Nevertheless …
B Hu, JO Gonzalez, L Ran, H Ren, Z Zeng, W Lai… - scholar.archive.org
The superior electro-thermal properties of SiC power devices permit higher temperature of operation and enable higher power density compared with silicon devices. Nevertheless …
B Hu, JO Gonzalez, L Ran, H Ren, Z Zeng, W Lai… - researchgate.net
The superior electro-thermal properties of SiC power devices permit higher temperature of operation and enable higher power density compared with silicon devices. Nevertheless …
B Hu, JO Gonzalez, L Ran, H Ren, Z Zeng, W Lai… - core.ac.uk
The superior electro-thermal properties of SiC power devices permit higher temperature of operation and enable higher power density compared with silicon devices. Nevertheless …
B Hu, JO Gonzalez, L Ran, H Ren, Z Zeng, W Lai… - core.ac.uk
The superior electro-thermal properties of SiC power devices permit higher temperature of operation and enable higher power density compared with silicon devices. Nevertheless …
B Hu, JO Gonzalez, L Ran, H Ren, Z Zeng, W Lai… - wrap.warwick.ac.uk
The superior electro-thermal properties of SiC power devices permit higher temperature of operation and enable higher power density compared with silicon devices. Nevertheless …
B Hu, JO Gonzalez, L Ran, H Ren, Z Zeng, W Lai… - gala.gre.ac.uk
The superior electro-thermal properties of SiC power devices permit higher temperature of operation and enable higher power density compared with silicon devices. Nevertheless …