Failure and reliability analysis of a SiC power module based on stress comparison to a Si device

B Hu, JO Gonzalez, L Ran, H Ren… - … on device and …, 2017 - ieeexplore.ieee.org
The superior electro-thermal properties of silicon carbide (SiC) power devices permit higher
temperature of operation and enable higher power density compared with silicon devices …
被引用次数：174 相关文章

[引用][C] Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si Device

B Hu, JO Gonzalez, L Ran, H Ren, Z Zeng… - IEEE Transactions on …, 2017 - cir.nii.ac.jp
Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si
Device | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索 …

Failure and reliability analysis of a SiC power module based on stress comparison to a Si device

H Lu, C Bailey - IEEE Transactions on Device and Materials …, 2017 - gala.gre.ac.uk
The superior electro-thermal properties of SiC power devices permit higher temperature of
operation and enable higher power density compared with silicon devices. Nevertheless …

Failure and reliability analysis of a SiC power module based on stress comparison to a Si device

B Hu, JA Ortiz Gonzalez, L Ran, H Ren… - … on Device and …, 2017 - wrap.warwick.ac.uk
The superior electro-thermal properties of SiC power devices permit higher temperature of
operation and enable higher power density compared with silicon devices. Nevertheless …
[PDF] archive.org

[PDF][PDF] Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si Device

B Hu, JO Gonzalez, L Ran, H Ren, Z Zeng, W Lai… - scholar.archive.org
The superior electro-thermal properties of SiC power devices permit higher temperature of
operation and enable higher power density compared with silicon devices. Nevertheless …
[PDF] researchgate.net

[PDF][PDF] Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si Device

B Hu, JO Gonzalez, L Ran, H Ren, Z Zeng, W Lai… - researchgate.net
The superior electro-thermal properties of SiC power devices permit higher temperature of
operation and enable higher power density compared with silicon devices. Nevertheless …
[PDF] core.ac.uk

[PDF][PDF] Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si Device

B Hu, JO Gonzalez, L Ran, H Ren, Z Zeng, W Lai… - core.ac.uk
The superior electro-thermal properties of SiC power devices permit higher temperature of
operation and enable higher power density compared with silicon devices. Nevertheless …
[PDF] core.ac.uk

[PDF][PDF] Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si Device

B Hu, JO Gonzalez, L Ran, H Ren, Z Zeng, W Lai… - core.ac.uk
The superior electro-thermal properties of SiC power devices permit higher temperature of
operation and enable higher power density compared with silicon devices. Nevertheless …
[PDF] warwick.ac.uk

[PDF][PDF] Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si Device

B Hu, JO Gonzalez, L Ran, H Ren, Z Zeng, W Lai… - wrap.warwick.ac.uk
The superior electro-thermal properties of SiC power devices permit higher temperature of
operation and enable higher power density compared with silicon devices. Nevertheless …
[PDF] gre.ac.uk

[PDF][PDF] Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si Device

B Hu, JO Gonzalez, L Ran, H Ren, Z Zeng, W Lai… - gala.gre.ac.uk
The superior electro-thermal properties of SiC power devices permit higher temperature of
operation and enable higher power density compared with silicon devices. Nevertheless …