Extremely high uniformity of interfaces in GaAs/AlGaAs quantum wells grown on (411) A GaAs substrates by molecular beam epitaxy

S Hiyamizu, S Shimomura, A Wakejima… - Journal of Vacuum …, 1994 - pubs.aip.org
GaAs/AlGaAs quantum wells (QWs) were grown on (411) A‐oriented GaAs substrates by
molecular beam epitaxy (MBE). Photoluminescence linewidths at 4.2 K are almost the same …
被引用次数：60 相关文章

Extremely high uniformity of interfaces in GaAs/AlGaAs quantum wells grown on (411) A GaAs substrates by molecular beam epitaxy

S Hiyamizu, S Shimomura, A Wakejima… - Journal of Vacuum …, 1994 - pubs.aip.org
GaAs/AlGaAs quantum wells (QWs) were grown on (411) A‐oriented GaAs substrates by
molecular beam epitaxy (MBE). Photoluminescence linewidths at 4.2 K are almost the same …

[引用][C] Extremely high uniformity of interfaces in GaAs/AlGaAs quantum wells grown on (411) A GaAs substrates by molecular beam epitaxy

S Hiyamizu, S Shimomura… - Journal of Vacuum …, 1994 - ui.adsabs.harvard.edu
Extremely high uniformity of interfaces in GaAs/AlGaAs quantum wells grown on (411)A GaAs
substrates by molecular beam epitaxy - NASA/ADS Now on home page ads icon ads Enable …

Extremely high uniformity of interfaces in GaAs/AlGaAs quantum wells grown on (411) A GaAs substrates by molecular beam epitaxy

S Hiyamizu, S Shimomura, A Wakejima… - Journal of Vacuum …, 1994 - cir.nii.ac.jp
抄録< jats: p> GaAs/AlGaAs quantum wells (QWs) were grown on (411) A-oriented GaAs
substrates by molecular beam epitaxy (MBE). Photoluminescence linewidths at 4.2 K are …

[引用][C] EXTREMELY HIGH UNIFORMITY OF INTERFACES IN GAAS

S HIYAMIZU, S SHIMOMURA… - Journal of vacuum …, 1994 - American Institute of Physics