Capacitive properties and structure of RuO2-HfO2 films prepared by thermal decomposition method

X Liu, J Zhu, X Wang, J Sun, Z Tang, T Zhang… - Physics Procedia, 2013 - Elsevier
Abstract Binary RuO2-HfO2 films on Ti substrates were prepared by a thermal
decomposition method. cyclic voltammetric and charge/discharge properties of the RuO2 …

Capacitive Properties and Structure of RuO2-HfO2 Films Prepared by Thermal Decomposition Method

X Liu, J Zhu, X Wang, J Sun, Z Tang… - Physics …, 2013 - ui.adsabs.harvard.edu
Abstract Binary RuO2-HfO2 films on Ti substrates were prepared by a thermal
decomposition method. cyclic voltammetric and charge/discharge properties of the RuO2 …

[PDF][PDF] Capacitive Properties and Structure of RuO2-HfO2 Films Prepared by Thermal Decomposition Method

X Liua, J Zhua, X Wanga, J Suna, Z Tangb… - Physics …, 2013 - scholar.archive.org
Abstract Binary RuO2-HfO2 films on Ti substrates were prepared by a thermal
decomposition method. cyclic voltammetric and charge/discharge properties of the RuO2 …

[PDF][PDF] Capacitive Properties and Structure of RuO2-HfO2 Films Prepared by Thermal Decomposition Method

X Liua, J Zhua, X Wanga, J Suna, Z Tangb, T Zhangb… - Physics Procedia, 2013 - core.ac.uk
Abstract Binary RuO2-HfO2 films on Ti substrates were prepared by a thermal
decomposition method. cyclic voltammetric and charge/discharge properties of the RuO2 …

[PDF][PDF] Capacitive Properties and Structure of RuO2-HfO2 Films Prepared by Thermal Decomposition Method

X Liua, J Zhua, X Wanga, J Suna, Z Tangb… - Physics …, 2013 - researchgate.net
Abstract Binary RuO2-HfO2 films on Ti substrates were prepared by a thermal
decomposition method. cyclic voltammetric and charge/discharge properties of the RuO2 …

[PDF][PDF] Capacitive Properties and Structure of RuO2-HfO2 Films Prepared by Thermal Decomposition Method

X Liua, J Zhua, X Wanga, J Suna, Z Tangb… - Physics …, 2013 - cyberleninka.org
Abstract Binary RuO2-HfO2 films on Ti substrates were prepared by a thermal
decomposition method. cyclic voltammetric and charge/discharge properties of the RuO2 …

Capacitive Properties and Structure of RuO2-HfO2 Films Prepared by Thermal Decomposition Method

X Liu, J Zhu, X Wang, J Sun, Z Tang, T Zhang… - Physics Procedia, 2013 - infona.pl
Binary RuO2-HfO2 films on Ti substrates were prepared by a thermal decomposition
method. cyclic voltammetric and charge/discharge properties of the RuO2-HfO2 electrodes …

Capacitive Properties and Structure of RuO₂-HfO₂ Films Prepared by Thermal Decomposition Method

X Liu, J Zhu, X Wang, J Sun, Z Tang, T Zhang… - 2013 - scholarsmine.mst.edu
Abstract Binary RuO 2-HfO 2 films on Ti substrates were prepared by a thermal
decomposition method. cyclic voltammetric and charge/discharge properties of the RuO 2 …

[PDF][PDF] Capacitive Properties and Structure of RuO₂-HfO₂ Films Prepared Capacitive Properties and Structure of RuO-HfO Films Prepared by Thermal …

X Liu, J Zhu, X Wang, J Sun - Physics Procedia, 2013 - core.ac.uk
Abstract Binary RuO2-HfO2 films on Ti substrates were prepared by a thermal
decomposition method. cyclic voltammetric and charge/discharge properties of the RuO2 …

Capacitive Properties and Structure of RuO2-HfO2 Films Prepared by Thermal Decomposition Method

X Liu, J Zhu, X Wang, J Sun, Z Tang, T Zhang… - Physics Procedia, 2013 - infona.pl
Binary RuO2-HfO2 films on Ti substrates were prepared by a thermal decomposition
method. cyclic voltammetric and charge/discharge properties of the RuO2-HfO2 electrodes …