Defect levels and interface space charge area responsible for negative photovoltage component in InAs/GaAs quantum dot photodetector structure

S Golovynskyi, OI Datsenko, L Seravalli… - Microelectronic …, 2020 - Elsevier
InAs/GaAs quantum dot photodetector photoresponse spectra consist of quantum dot,
wetting layer and GaAs components, however, they frequently contain features attributed to …
被引用次数：4 相关文章

[引用][C] Defect levels and interface space charge area responsible for negative photovoltage component in InAs/GaAs quantum dot photodetector structure

S Golovynskyi, B Li, J Qu, OI Datsenko… - Microelectronic …, 2020 - elibrary.ru