Low-threshold single-quantum-well InGaAs/GaAs lasers grown by metal-organic chemical vapor deposition on structure substrates

NC Frateschi, JS Osinski, CA Beyler… - IEEE photonics …, 1992 - ieeexplore.ieee.org
Low-threshold current (as low as 3.0 mA) and high-external efficiency (approximately= 88%)
InGaAs/GaAs lasers emitting at 1 mu m under a stable fundamental transverse mode were …
被引用次数：22 相关文章

[引用][C] Low-threshold single-quantum-well InGaAs/GaAs lasers grown by metal-organic chemical vapor deposition on structured substrates

NC FRATESCHI, JS OSINSKI… - IEEE photonics …, 1992 - pascal-francis.inist.fr
Low-threshold single-quantum-well InGaAs/GaAs lasers grown by metal-organic chemical
vapor deposition on structured substrates CNRS Inist Pascal-Francis CNRS Pascal and …

[引用][C] Low-threshold single-quantum-well InGaAs/GaAs lasers grown by metal-organic chemical vapor deposition on structure substrates

NC Frateschi, JS Osinski, CA Beyler… - IEEE Photonics …, 1992 - ui.adsabs.harvard.edu
Low-threshold single-quantum-well InGaAs/GaAs lasers grown by metal-organic chemical
vapor deposition on structure substrates - NASA/ADS Now on home page ads icon ads Enable …

[引用][C] Low-threshold single-quantum-well InGaAs/GaAs lasers grown by metal-organic chemical vapor deposition on structured substrates

NC FRATESCHI, JS OSINSKI, CA BEYLER… - IEEE photonics technology …, 1992