Metalorganic vapor phase epitaxical growth and 1.5‐μm laser fabrication using ethyldimethylindium, tertiarybutylphosphine, and tertiarybutylarsine

M Ogasawara, K Sato, Y Kondo - Applied physics letters, 1992 - pubs.aip.org
High‐quality InGaAsP lattice matched to InP was grown by low‐pressure metalorganic vapor
phase epitaxy using ethyldimethylindium (EDMIn), tertiarybutylphosphine (TBP), and …
被引用次数：12 相关文章

Metalorganic vapor phase epitaxical growth and 1.5-µm laser fabrication using ethyldimethylindium, tertiarybutylphosphine, and tertiarybutylarsine

M Ogasawara, K Sato, Y Kondo - Applied Physics Letters, 1992 - ui.adsabs.harvard.edu
High-quality InGaAsP lattice matched to InP was grown by low-pressure metalorganic vapor
phase epitaxy using ethyldimethylindium (EDMIn), tertiarybutylphosphine (TBP), and …

Metalorganic vapor hase epitaxical growth and 1.5 y. rn laser fabrication using ethyldimethylindium, tertiarybutylphosphine, and tertiarybutylarsine

M Ogasawara, K Sato, Y Kondo - Appl. Phys. Lett, 1992 - pubs.aip.org
High-quality InGaAsP lattice matched to InP was grown by low-pressure metalorganic vapor
phase epitaxy using ethyldimethylindium (EDMIn), tertiarybutylphosphine (TBP), and …

[引用][C] Metalorganic vapor phase epitaxial growth and 1.5 μm laser fabrication using ethyldimethylindium, tertiarybutylphosphine, and tertiarybutylarsine

M OGASAWARA, K SATO, Y KONDO - Applied physics letters, 1992 - pascal-francis.inist.fr
Metalorganic vapor phase epitaxial growth and 1.5 μm laser fabrication using
ethyldimethylindium, tertiarybutylphosphine, and tertiarybutylarsine CNRS Inist Pascal-Francis …

[引用][C] Metalorganic vapor phase epitaxial growth and 1.5 μm laser fabrication using ethyldimethylindium, tertiarybutylphosphine, and tertiarybutylarsine

M OGASAWARA, K SATO… - Applied physics …, 1992 - American Institute of Physics