GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications

JP Duchemin, JP Hirtz, M Razeghi, M Bonnet… - Journal of Crystal …, 1981 - Elsevier
The low pressure MOCVD technique has been successfully used to grow GaInAsP, lattice-
matched to InP, for the complete compositional range between InP (λ= 0.91 μm) and the …
被引用次数：100 相关文章

GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications

JP Duchemin, JP Hirtz, M Razeghi… - Journal of Crystal …, 1981 - scholars.northwestern.edu
The low pressure MOCVD technique has been successfully used to grow GaInAsP, lattice-
matched to InP, for the complete compositional range between InP (λ= 0.91 μm) and the …

[引用][C] GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications

JP Duchemin, JP Hirtz, M Razeghi, M Bonnet… - Journal of Crystal …, 1981 - cir.nii.ac.jp
GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and
optoelectronic applications | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ …

GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications

JP Duchemin, JP Hirtz, M Razeghi… - Journal of Crystal …, 1981 - ui.adsabs.harvard.edu
The low pressure MOCVD technique has been successfully used to grow GaInAsP, lattice-
matched to InP, for the complete compositional range between InP (λ= 0.91 μm) and the …