Low‐threshold 1.25‐μm vapor‐grown InGaAsP cw lasers

GH Olsen, CJ Nuese, M Ettenberg - Applied Physics Letters, 1979 - pubs.aip.org
Vapor-grown double-heterojunction lasers of InGaAsP/InP have been prepared with cw
room-temperature threshold currents of 85 rnA and differential quantum efficiencies …

Low-threshold 1.25-μm vapor-grown InGaAsP cw lasers

GH Olsen, CJ Nuese, M Ettenberg - Applied Physics Letters, 1979 - ui.adsabs.harvard.edu
Vapor-grown double-heterojunction lasers of InGaAsP/InP have been prepared with cw
room-temperature threshold currents of 85 mA and differential quantum efficiencies …

Low-threshold 1.25-μm vapor-grown InGaAsP cw lasers

GH Olsen, CJ Nuese, M Ettenberg - Applied Physics Letters, 1979 - cir.nii.ac.jp
抄録< jats: p> Vapor-grown double-heterojunction lasers of InGaAsP/InP have been
prepared with cw room-temperature threshold currents of 85 mA and differential quantum …

[引用][C] Low‐threshold 1.25‐μm vapor‐grown InGaAsP cw lasers

GH Olsen, CJ Nuese, M Ettenberg - Applied Physics Letters, 1979 - pubs.aip.org
Vapor‐grown double‐heterojunction lasers of InGaAsP/InP have been prepared with cw
room‐temperature threshold currents of 85 mA and differential quantum efficiencies …

[引用][C] LOW-THRESHOLD 1.25-MU M VAPOR-GROWN INGAASP CU LASERS

GH OLSEN, N CJ, M ETTENBERG - 1979 - pascal-francis.inist.fr
LOW-THRESHOLD 1.25-MU M VAPOR-GROWN INGAASP CU LASERS CNRS Inist Pascal-Francis
CNRS Pascal and Francis Bibliographic Databases Simple search Advanced search Search …

[引用][C] Low-threshold 1. 25-. mu. m vapor-grown InGaAsP cw lasers

GH Olsen, CJ Nuese, M Ettenberg - Appl. Phys. Lett.;(United States), 1979 - osti.gov
Vapor-grown double-heterojunction lasers of InGaAsP/InP have been prepared with cw
room-temperature threshold currents of 85 mA and differential quantum efficiencies …