Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium

H Kim, D Ren, AC Farrell, DL Huffaker - Nanotechnology, 2018 - iopscience.iop.org
We demonstrate catalyst-free growth of GaAs nanowires by selective-area metal-organic
chemical vapor deposition (MOCVD) on GaAs and silicon substrates using a triethylgallium …
被引用次数：24 相关文章

Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium

H Kim, D Ren, AC Farrell, DL Huffaker - Nanotechnology, 2018 - experts.illinois.edu
We demonstrate catalyst-free growth of GaAs nanowires by selective-area metal-organic
chemical vapor deposition (MOCVD) on GaAs and silicon substrates using a triethylgallium …

Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium

H Kim, D Ren, AC Farrell, DL Huffaker - Nanotechnology, 2018 - pubmed.ncbi.nlm.nih.gov
We demonstrate catalyst-free growth of GaAs nanowires by selective-area metal-organic
chemical vapor deposition (MOCVD) on GaAs and silicon substrates using a triethylgallium …

Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium

H Kim, D Ren, AC Farrell, DL Huffaker - Nanotechnology, 2018 - hero.epa.gov
We demonstrate catalyst-free growth of GaAs nanowires by selective-area metal-organic
chemical vapor deposition (MOCVD) on GaAs and silicon substrates using a triethylgallium …

Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium.

H Kim, D Ren, AC Farrell, DL Huffaker - Nanotechnology, 2018 - europepmc.org
We demonstrate catalyst-free growth of GaAs nanowires by selective-area metal-organic
chemical vapor deposition (MOCVD) on GaAs and silicon substrates using a triethylgallium …

Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium

H Kim, D Ren, AC Farrell, DL Huffaker - Nanotechnology, 2018 - ui.adsabs.harvard.edu
We demonstrate catalyst-free growth of GaAs nanowires by selective-area metal-organic
chemical vapor deposition (MOCVD) on GaAs and silicon substrates using a triethylgallium …

Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium

H Kim, D Ren, AC Farrell, DL Huffaker - Nanotechnology (Print), 2018 - inis.iaea.org
[en] We demonstrate catalyst-free growth of GaAs nanowires by selective-area metal-
organic chemical vapor deposition (MOCVD) on GaAs and silicon substrates using a …

Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium

H Kim, D Ren, A Farrell, D Huffaker - Nanotechnology, 2018 - orca.cardiff.ac.uk
We demonstrate catalyst-free growth of GaAs nanowires by selective-area metal-organic
chemical vapor deposition (MOCVD) on GaAs and silicon substrates using a triethylgallium …
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[PDF][PDF] Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium

H Kim, D Ren, AC Farrell, DL Huffaker - Nanotechnology, 2018 - par.nsf.gov
Catalyst-free selective-area epitaxy of GaAs nanowires by metal- organic chemical vapor
deposition using triethylgallium Page 1 1 Catalyst-free selective-area epitaxy of GaAs nanowires …