GaAlAs/GaAs MOCVD growth for surface emitting laser
F Koyama, H Uenohara, T Sakaguchi… - Japanese journal of …, 1987 - iopscience.iop.org
Abstract A GaAlAs/GaAs Metalorganic chemical vapor deposition (MOCVD) has been
introduced for growing GaAlAs/GaAs wafers with a thick active layer (d\cong3 µm) and …
introduced for growing GaAlAs/GaAs wafers with a thick active layer (d\cong3 µm) and …
GaAlAs/GaAs MOCVD Growth for Surface Emitting Laser
F Koyama, H Uenohara, T Sakaguchi… - Japanese Journal of …, 1987 - cir.nii.ac.jp
抄録< jats: p> A GaAlAs/GaAs Metalorganic chemical vapor deposition (MOCVD) has been
introduced for growing GaAlAs/GaAs wafers with a thick active layer (< jats: italic> d</jats …
introduced for growing GaAlAs/GaAs wafers with a thick active layer (< jats: italic> d</jats …
[引用][C] GaAlAs/GaAs MOCVD growth for surface emitting laser
F KOYAMA, H UENOHARA… - Japanese journal of …, 1987 - pascal-francis.inist.fr
GaAlAs/GaAs MOCVD growth for surface emitting laser CNRS Inist Pascal-Francis CNRS
Pascal and Francis Bibliographic Databases Simple search Advanced search Search by …
Pascal and Francis Bibliographic Databases Simple search Advanced search Search by …
[引用][C] GaAlAs/GaAs MOCVD Growth for Surface Emitting Laser
F Koyama, H Uenohara, T Sakaguchi… - Japanese Journal of …, 1987 - jlc.jst.go.jp
A GaAlAs/GaAs Metalorganic chemical vapor deposition (MOCVD) has been introduced for
growing GaAlAs/GaAs wafers with a thick active layer (d≅ 3 μm) and multilayer Bragg …
growing GaAlAs/GaAs wafers with a thick active layer (d≅ 3 μm) and multilayer Bragg …
GaAlAs/GaAs MOCVD Growth for Surface Emitting Laser
F Koyama, H Uenohara… - Japanese Journal of …, 1987 - ui.adsabs.harvard.edu
Abstract A GaAlAs/GaAs Metalorganic chemical vapor deposition (MOCVD) has been
introduced for growing GaAlAs/GaAs wafers with a thick active layer (d {\cong} 3 μm) and …
introduced for growing GaAlAs/GaAs wafers with a thick active layer (d {\cong} 3 μm) and …
[引用][C] GaAlAs/GaAs MOCVD Growth for Surface Emitting Laser
F Koyama, H Uenohara, T Sakaguchi… - Japanese Journal of …, 1987 - jlc.jst.go.jp
A GaAlAs/GaAs Metalorganic chemical vapor deposition (MOCVD) has been introduced for
growing GaAlAs/GaAs wafers with a thick active layer (d≅ 3 μm) and multilayer Bragg …
growing GaAlAs/GaAs wafers with a thick active layer (d≅ 3 μm) and multilayer Bragg …
GaAlAs/GaAs MOCVD Growth for Surface Emitting Laser
K Fumio, U Hiroyuki, S Takahiro, I Kenichi - Japanese Journal of Applied …, 1987 - cir.nii.ac.jp
抄録 A GaAlAs/GaAs Metalorganic chemical vapor deposition (MOCVD) has been
introduced for growing GaAlAs/GaAs wafers with a thick active layer (d≅ 3 μm) and …
introduced for growing GaAlAs/GaAs wafers with a thick active layer (d≅ 3 μm) and …